Plasma processing apparatus, calculation method, and calculation program

ABSTRACT

In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to Japanese Patent Application Nos.2018-224397 and 2019-100516, respectively filed on Nov. 30, 2018 and May29, 2019, the entire contents of which are incorporated herein byreference.

TECHNICAL FIELD

The present disclosure relates to a plasma processing apparatus, acalculation method, and a calculation program.

BACKGROUND

Japanese Patent Application Publication No. 2015-201558 proposes atechnique for flattening an interface of a plasma sheath formed above asemiconductor wafer and an interface of a plasma sheath formed above afocus ring by disposing an annular coil at an upper portion of a chamberand generating a magnetic field by supplying a current to the coil.

SUMMARY

The present disclosure provides a technique capable of obtaining thedegree of consumption of a consumable part.

In accordance with an aspect of the present disclosure, there isprovided a plasma processing apparatus including: a mounting tableincluding a heater configured to adjust a temperature of a mountingsurface thereof on which a consumable part that is consumed by plasmaprocessing is mounted; a heater control unit configured to control asupply power to the heater such that the heater reaches a settingtemperature; a measurement unit configured to measure, while the supplypower to the heater is controlled by the heater control unit such thatthe temperature of the heater becomes constant, the supply power in anon-ignition state in which plasma is not ignited and the supply powerin a transient state in which the supply power to the heater isdecreased after the plasma is ignited, a parameter calculation unitconfigured to calculate a thickness of the consumable part by performingfitting of the thickness of the consumable part with a calculationmodel, which has the thickness of the consumable part as a parameter andcalculates the supply power in the transient state, by using themeasured supply power in the non-ignition state and the measured supplypower in the transient state.

BRIEF DESCRIPTION OF THE DRAWINGS

The objects and features of the disclosure will become apparent from thefollowing description of embodiments, given in conjunction with theaccompanying drawings, in which:

FIG. 1 is a cross-sectional view showing an example of a schematicconfiguration of a plasma processing apparatus according to a firstembodiment;

FIG. 2 is a plan view showing a mounting table according to the firstembodiment;

FIG. 3 is a block diagram showing an example of a schematicconfiguration of a control unit that controls the plasma processingapparatus according to the first embodiment;

FIG. 4 is a diagram schematically showing a flow of energy affecting atemperature of a focus ring;

FIG. 5 is a diagram schematically showing a flow of energy before thefocus ring is consumed;

FIG. 6 is a diagram schematically showing a flow of energy after thefocus ring is consumed;

FIG. 7 shows an example of a change in a temperature of the focus ringand a change in a supply power to a heater;

FIG. 8 is a flowchart showing an example of a flow of a determinationprocess according to the first embodiment;

FIG. 9 is a cross-sectional view showing an example of a schematicconfiguration of a plasma processing apparatus according to a secondembodiment;

FIG. 10 is a block diagram showing an example of a schematicconfiguration of a control unit that controls the plasma processingapparatus according to the second embodiment;

FIG. 11 is a diagram schematically showing an example of a state of aplasma sheath;

FIG. 12A is a graph showing an example of a relationship betweenmagnetic field strength and plasma electron density;

FIG. 12B is a graph showing an example of the relationship between themagnetic field strength and a thickness of the plasma sheath;

FIG. 13 is a flowchart showing an example of a flow of determinationprocess according to the second embodiment;

FIG. 14 is a cross-sectional view showing an example of a schematicconfiguration of a plasma processing apparatus according to a thirdembodiment;

FIG. 15 is a cross-sectional view showing an example of a schematicconfiguration of a plasma processing apparatus according to a fourthembodiment;

FIG. 16 is a cross-sectional view showing an example of a schematicconfiguration of a plasma processing apparatus according to a fifthembodiment;

FIG. 17 is a schematic cross-sectional view showing configurations ofthe principal parts of a first mounting table and a second mountingtable according to the fifth embodiment;

FIGS. 18A to 18C show an example of a sequence of raising the secondmounting table; and

FIG. 19 is a plan view showing a mounting table according to anotherembodiment.

DETAILED DESCRIPTION

Hereinafter, embodiments of a plasma processing apparatus, a calculationmethod, and a calculation program will be described in detail withreference to the drawings. In the present disclosure, for example, anapparatus that performs plasma etching will be described in detail as aspecific example of the plasma processing apparatus. Further, the plasmaprocessing apparatus, the calculation method, and the calculationprogram to be disclosed are not limited by the embodiments.

There is known a plasma processing apparatus for performing an etchingprocess using plasma on a semiconductor wafer (hereinafter, referred toas a “wafer”). In the plasma processing apparatus, a focus ring isarranged to surround the wafer. Since the plasma processing apparatusincludes the focus ring disposed to surround the wafer, a plasma statearound the wafer becomes uniform so that uniformity of etchingcharacteristics of the entire wafer surface can be obtained. However,the focus ring is consumed and its thickness becomes thinner by etching.In the plasma processing apparatus, the etching characteristics on theouter peripheral portion of the wafer deteriorate as the focus ring isconsumed. Therefore, it is necessary to periodically replace the focusring in the plasma processing apparatus.

Conventionally, in plasma processing apparatus, a replacement time ofthe focus ring is determined based on past results such as the number ofprocessed wafers, or whether the focus ring should be replaced or not isdetermined by periodically processing the wafer in which the etchingcharacteristics on the outer peripheral portion of the wafer ismonitored.

However, the plasma processing apparatus performs the processings withdifferent process recipes. For this reason, the plasma processingapparatus requires the use of a replacement time that gave a certainamount of margin to the past results and, thus, the productivity of theplasma processing apparatus decreases. Further, the periodic processingof the wafer that is monitored also decreases the productivity of theplasma processing apparatus.

Although the above problems have been described based on the consumptionof the focus ring, the same problem occurs for all consumable parts thatare consumed by the plasma processing. Therefore, a technique forobtaining the degree of consumption of consumable parts that areconsumed by the plasma processing is expected in the plasma processingapparatus.

First Embodiment

(Configuration of Plasma Processing Apparatus)

First, a configuration of a plasma processing apparatus 10 according toa first embodiment will be described. FIG. 1 is a cross-sectional viewshowing an example of a schematic configuration of the plasma processingapparatus according to the first embodiment. The plasma processingapparatus 10 shown in FIG. 1 is a capacitively-coupled parallel-plateplasma etching apparatus. The plasma processing apparatus 10 includes asubstantially cylindrical processing chamber 12. The processing chamber12 is made of, e.g., aluminum. Further, the processing chamber 12 has ananodically oxidized surface.

A mounting table 16 is provided in the processing chamber 12. Themounting table 16 includes an electrostatic chuck 18 and a base 20. Anupper surface of the electrostatic chuck 18 is a mounting surface onwhich a target object to be subjected to plasma processing is mounted.In the present embodiment, a wafer W that is the target object ismounted on the upper surface of the electrostatic chuck 18. The base 20has a substantially disc shape, and a main part thereof is made of aconductive metal, e.g., aluminum. The base 20 serves as a lowerelectrode. The base 20 is supported by a support portion 14. The supportportion 14 is a cylindrical member vertically extending upward from abottom portion of the processing chamber 12.

A first high-frequency power supply HFS is electrically connected to thebase 20 through a matching unit MU1. The first high-frequency powersupply HFS is a power supply for plasma generation and applies ahigh-frequency power having a frequency in a range from 27 to 100 MHz,e.g., 40 MHz. Accordingly, plasma is generated directly on the base 20.The matching unit MU1 includes a circuit for matching output impedanceof the first high-frequency power supply HFS with input impedance of aload side (base 20 side).

Further, a second high-frequency power supply LFS is electricallyconnected to the base 20 through the matching unit MU2. The secondhigh-frequency power supply LFS generates and applies a high-frequencypower (high-frequency bias power) for attracting ions into the wafer Wto the base 20. As a result, a bias potential is generated in the base20. The high-frequency bias power has a frequency in a range from 400kHz to 13.56 MHz, e.g., 3 MHz. The matching unit MU2 includes a circuitfor matching output impedance of the second high-frequency power supplyLFS with input impedance of the load side (base 20 side).

The electrostatic chuck 18 is disposed on the base 20. The wafer W isattracted to and held on the electrostatic chuck 18 by an electrostaticforce such as Coulomb force. The electrostatic chuck 18 includes anelectrode E1 for electrostatic adsorption in a main body portion formedof ceramic. A DC power supply 22 is electrically connected to theelectrode E1 through a switch SW1. The electrostatic force forattracting and holding the wafer W depends on a value of a DC voltageapplied from the DC power supply 22.

On the mounting table 16, a consumable part that is consumed by theplasma processing is mounted. For example, a focus ring FR is disposedas the consumable part to surround the wafer W on the electrostaticchuck 18. The focus ring FR is provided to improve uniformity of plasmaprocessing. The focus ring FR is formed of a material appropriatelyselected depending on the plasma processing to be performed. Forexample, the focus ring FR may be formed of silicon or quartz.

A coolant channel 24 is formed in the base 20. The coolant is suppliedto the coolant channel 24 from a chiller unit provided outside of theprocessing chamber 12 through a line 26 a. The coolant supplied to thecoolant channel 24 returns to the chiller unit through a line 26 b.

An upper electrode 30 is provided in the processing chamber 12. Theupper electrode 30 is disposed above the mounting table 16 to beopposite to the mounting table 16. The mounting table 16 and the upperelectrode 30 are arranged to be substantially parallel to each other.

The upper electrode 30 is supported at an upper portion of theprocessing chamber 12 via an insulating shielding member 32. The upperelectrode 30 includes an electrode plate 34 and an electrode holder 36.The electrode plate 34 faces a processing space S, and a plurality ofgas injection holes 34 a are formed in the electrode plate 34. Theelectrode plate 34 is formed of a low resistance conductor orsemiconductor with a small Joule heat. The upper electrode 30 isconfigured to perform a temperature control. For example, the upperelectrode 30 includes a temperature control mechanism such as a heater(not shown) to perform the temperature control.

The electrode holder 36 detachably holds the electrode plate 34. Theelectrode holder 36 is made of a conductive material such as aluminum. Agas diffusion chamber 36 a is formed in the electrode holder 36. In theelectrode holder 36, a plurality of gas through holes 36 b extenddownward from the gas diffusion chamber 36 a to communicate with the gasinjection holes 34 a. Further, a gas inlet port 36 c through which aprocessing gas is introduced into the gas diffusion chamber 36 a isformed in the electrode holder 36. A gas supply line 38 is connected tothe gas inlet port 36 c.

A gas source group (GS) 40 is connected to the gas supply line 38through a valve group (VG) 42 and a flow rate controller group (FRC) 44.The valve group 42 includes a plurality of opening and closing valves.The flow rate controller group 44 includes a plurality of flow ratecontrollers that are mass flow controllers. Further, the gas sourcegroup 40 includes a plurality of gas sources for various kinds of gasesrequired for plasma processing. The gas sources of the gas source group40 are connected to the gas supply line 38 through the opening andclosing valves and the mass flow controllers corresponding thereto.

In the plasma processing apparatus 10, one or more gases from one ormore selected gas sources among the gas sources of the gas source group40 are supplied to the gas supply line 38. Each of one or more gasessupplied to the gas supply line 38 is supplied to the gas diffusionchamber 36 a and is injected to the processing space S through the gasthrough holes 36 b and the gas injection holes 34 a.

Further, the plasma processing apparatus 10 further includes a groundconductor 12 a. The ground conductor 12 a is a substantially cylindricalground conductor and extends upward from the sidewall of the processingchamber 12 so as to be located at a position higher than the heightposition of the upper electrode 30.

Further, in the plasma processing apparatus 10, the deposition shield 46is detachably provided along the inner wall of the processing chamber12. Further, the deposition shield 46 is also provided at an outerperiphery of the support portion 14. The deposition shield 46 preventsetching by-products (deposits) from adhering to the processing chamber12. The deposition shield 46 may be made of aluminum coated with ceramicsuch as Y₂O₃ or the like. The deposition shield 46 is configured toperform a temperature control. For example, the deposition shield 46includes a temperature control mechanism such as a heater (not shown) toperform the temperature control.

A gas exhaust plate 48 is provided at the bottom portion side of theprocessing chamber 12 and between the support portion 14 and the innerwall of the processing chamber 12. The gas exhaust plate 48 may beformed by coating aluminum with ceramic, e.g., Y₂O₃ or the like. A gasexhaust port 12 e is provided below the gas exhaust plate 48 in theprocessing chamber 12. A gas exhaust unit (EU) 50 is connected to thegas exhaust port 12 e through a gas exhaust line 52. The gas exhaustunit 50 includes a vacuum pump such as a turbo molecular pump or thelike so that a pressure in the space in the processing chamber 12 can bedecreased to a predetermined vacuum level when performing the plasmaprocessing. Further, a loading/unloading port 12 g for the wafer W isprovided at the sidewall of the processing chamber 12. Theloading/unloading port 12 g can be opened and closed by a gate valve 54.

The operation of the plasma processing apparatus 10 configured asmentioned above is integrally controlled by a control unit 100. Thecontrol unit 100 is, e.g., a computer and controls the respectivecomponents of the plasma processing apparatus 10. The operation of theplasma processing apparatus 10 is integrally controlled by the controlunit 100.

(Configuration of Mounting Table)

Next, the mounting table 16 will be described in detail. FIG. 2 is aplan view showing the mounting table according to the first embodiment.As described above, the mounting table 16 includes the electrostaticchuck 18 and the base 20. The electrostatic chuck 18 is formed ofceramic, and an upper surface thereof is a mounting region 18 a on whichthe wafer W and the focus ring FR are mounted. The mounting region 18 abecomes a substantially circular region in the plan view. As shown inFIG. 1, the electrostatic chuck 18 includes the electrode E1 forelectrostatic adsorption in a region where the wafer W is disposed. Theelectrode E1 is connected to the DC power supply 22 through the switchSW1.

As shown in FIG. 1, heaters HT are provided below the electrode E1 inthe mounting region (mounting surface) 18 a. The mounting region 18 a isdivided into a plurality of division regions 75, and the heaters HT areprovided in the division regions 75, respectively. For example, as shownin FIG. 2, the mounting region 18 a includes a central circular divisionregion 75 a and an annular division region 75 b. The heaters HT areprovided in the division region 75 a and 75 b, respectively. Forexample, a heater HT1 is provided in the division region 75 a and aheater HT2 is provided in the division region 75 b. The wafer W isdisposed on the division region 75 a. The focus ring FR is disposed onthe division region 75 b. In the present embodiment, the upper surface(mounting surface) of the mounting table 16 is divided into two divisionregions 75 a and 75 b to perform the temperature control. However, thenumber of division regions 75 is not limited to two, and may be three ormore.

The heaters HT are individually connected to the heater power supply HPshown in FIG. 1 through wirings (not shown). The heater power supply HPsupplies individually adjusted electric powers to the heaters HT underthe control of the control unit 100. As a result, the heat generated byeach heater HT is individually controlled, and the temperatures of thedivision regions 75 in the mounting region 18 a are individuallyadjusted.

The heater power supply HP includes a power detection unit PD configuredto detect a supply power supplied to each heater HT. Further, the powerdetection unit PD may be provided separately from the heater powersupply HP by disposing on a wiring through which electric power flowsfrom the heater power supply HP to each heater HT. The power detectionunit PD detects the supply power supplied to each heater HT. Forexample, the power detection unit PD detects the amount of power [W] asthe supply power supplied to each heater HT. The heater HT generatesheat in accordance with the amount of power. For this reason, the amountof power supplied to the heater HT indicates a heater power. The powerdetection unit PD notifies the control unit 100 of power data indicatingthe detected supply power to each heater HT.

Further, the mounting table 16 includes a temperature sensor (not shown)configured to detect a temperature of the heater HT in each divisionregion 75 of the mounting region 18 a. The temperature sensor may be anelement that measures the temperature while providing separately fromthe heater HT. Further, the temperature sensor may be an element that isdisposed on a wiring through which electric power flows to the heater HTand detects the temperature by using the property in which electricalresistance increases as the temperature increases. Sensing valuesdetected by each temperature sensor are sent to a temperature measuringunit TD. The temperature measuring unit TD measures a temperature ofeach division region 75 of the mounting region 18 a from the respectivesensor values. The temperature measuring unit TD notifies the controlunit 100 of temperature data indicating the temperature of each divisionregion 75 of the mounting region 18 a.

Further, heat transfer gas such as He gas may be supplied between theupper surface of the electrostatic chuck 18 and the rear surface of thewafer W by a heat transfer gas supply mechanism and a gas supply linethat are not illustrated.

(Configuration of Control Unit)

Next, the control unit 100 will be described in detail. FIG. 3 is ablock diagram showing an example of a schematic configuration of thecontrol unit 100 that controls the plasma processing apparatus accordingto the first embodiment. The control unit 100 may be, e.g., a computerand includes an external interface 101, a process controller 102, a userinterface 103, and a storage unit 104.

The external interface 101 is configured to communicate with therespective components of the plasma processing apparatus 10 to input andoutput various types of data. For example, power data indicating thesupply power from the power detection unit PD to each heater HT is inputto the external interface 101. Further, temperature data indicating thetemperature of each division region 75 of the mounting region 18 a isinput to the external interface 101 from the temperature measuring unitTD. Further, the external interface 101 outputs to the heater powersupply HP control data for controlling the supply power supplied to eachheater HT.

The process controller 102 includes a central processing unit (CPU) andcontrols the respective components of the plasma processing apparatus10.

The user interface 103 includes a keyboard through which a processmanager input commands to manage the plasma processing apparatus 10, adisplay for visualizing and displaying an operation status of the plasmaprocessing apparatus 10, and the like.

The storage unit 104 stores therein a control program (software) forrealizing various processes performed by the plasma processing apparatus10 under the control of the process controller 102 and recipes includingprocessing condition data and the like. The storage unit 104 also storesparameters relating to an apparatus, a process, and the like forperforming plasma processing. Further, the control program, the recipe,and the parameters may be stored in a computer-readable storage medium(e.g., a hard disk, an optical disk such as a DVD, a flexible disk, asemiconductor memory, or the like). Alternatively, the control program,the recipe, and the parameters may be stored in another device to beread online, e.g., through a dedicated line and used.

The process controller 102 includes an internal memory for storing aprogram or data, reads out the control program stored in the storageunit 104, and executes processing of the read-out control program. Theprocess controller 102 serves as various processing units by executingthe control program. For example, the process controller 102 serves as aheater control unit 102 a, a measurement unit 102 b, a parametercalculation unit 102 c, a setting temperature calculation unit 102 d,and an alarm unit 102 e. Further, in the present embodiment, althoughthe case where the process controller 102 serves as various processingunits will be described as an example, the present disclosure is notlimited thereto. For example, the functions of the heater control unit102 a, the measurement unit 102 b, the parameter calculation unit 102 c,the setting temperature calculation unit 102 d, and the alarm unit 102 emay be distributed and realized by a plurality of controllers andrealized.

However, in plasma processing, the progress of processing changesdepending on the temperature. For example, in plasma etching, theprogress speed of etching changes depending on the temperatures of thewafer W and the focus ring FR. Therefore, in the plasma processingapparatus 10, it is conceivable to control the temperatures of the waferW and the focus ring FR to a target temperature by using each heater HT.

A flow of energy affecting the temperatures of the wafer W and the focusring FR will be described. Hereinafter, the flow of energy affecting thetemperature of the focus ring FR will be described only, but the flow ofenergy affecting the temperature of the wafer W is similar thereto. FIG.4 schematically shows the flow of energy affecting the temperature ofthe focus ring. In FIG. 4, the focus ring FR and the mounting table 16including the electrostatic chuck (ESC) 18 are illustrated in asimplified manner. Further, in an example of FIG. 4, the flow of energyaffecting the temperature of the focus ring FR with respect to onedivision region 75 (the division region 75 b) of the mounting region 18a of the electrostatic chuck 18 is shown. The mounting table 16 includesthe electrostatic chuck 18 and the base 20. The electrostatic chuck 18and the base 20 are bonded by a bonding layer 19. The heater HT (theheater HT2) is provided in the electrostatic chuck 18. The coolantchannel 24 through which a coolant flows is formed in the base 20.

The heater HT2 generates heat by the power supplied from the heaterpower supply HP, and a temperature thereof increases. In FIG. 4, thepower supplied to the heater HT2 is denoted as a heater power P_(h). Inthe heater HT2, a heat generation amount (heat flux) q_(h) per unitarea, which is obtained by dividing the heater power P_(h) by an area Aof the region where the heater HT2 of the electrostatic chuck 18 isprovided, is generated.

In the plasma processing apparatus 10, when temperatures of internalparts arranged in the processing chamber 12 such as the upper electrode30 and the deposition shield 46 are controlled, radiant heat isgenerated from the internal parts. For example, when the temperatures ofthe upper electrode 30 and the deposition shield 46 are controlled at ahigh temperature to suppress adhesion of deposits, the radiant heat isinput to the focusing ring FR from the upper electrode 30 and thedeposition shield 46. In FIG. 4, the radiant heat from the upperelectrode 30 and/or the deposition shield 46 to the focus ring FR isdenoted as “q_(r).”

Further, when the plasma processing is performed, heat is input to thefocus ring FR from the plasma. In FIG. 4, heat flux from the plasma perunit area, which is obtained by dividing the heat amount from the plasmato the focus ring FR by an area of the focus ring FR, is denoted as“q_(p).” The temperature of the focus ring FR is increased by input ofthe heat flux q_(p) from the plasma and input of the radiant heat q_(r).

The heat input by the radiant heat is proportional to the temperaturesof the internal parts of the processing chamber 12. For example, theheat input by the radiant heat is proportional to the fourth power ofthe temperatures of the upper electrode 30 and/or the deposition shield46. It is known that the heat input from the plasma is proportional tothe product of the amount of ions in the plasma irradiated to the focusring FR and a bias potential for attracting the ions in the plasma tothe focus ring FR. The amount of ions in the plasma irradiated to thefocus ring FR is proportional to an electron density of the plasma. Theelectron density of the plasma is proportional to the high-frequencypower of the first high-frequency power supply HFS applied for theplasma generation. Further, the electron density of the plasma dependson a pressure inside the processing chamber 12. The bias potential forattracting the ions in the plasma to the focus ring FR is proportionalto the high-frequency power of the second high-frequency power supplyLFS applied for the bias potential generation. Further, the biaspotential for attracting the ions in the plasma to the focus ring FRdepends on the pressure inside the processing chamber 12. When thehigh-frequency power is not applied to the mounting table 16, the ionsare attracted to the mounting table 16 by a potential difference betweena plasma potential generated when the plasma is generated and apotential of the mounting table 16.

Further, the heat input from the plasma includes irradiation to thefocus ring FR by electrons or radicals in the plasma or heating by lightemission of the plasma, a surface reaction on the focus ring FR due toions and radicals, and the like. These components also depend on thepowers of the high-frequency power supplies and/or the pressure insidethe processing chamber 12. In addition, the heat input from the plasmaalso depends on device parameters relating to the plasma generation,such as the distance between the mounting table 16 and the upperelectrode 30 or the type of gas supplied to the processing space S.

The heat transferred to the focus ring FR is transferred to theelectrostatic chuck 18. Here, not all the heat of the focus ring FR istransferred to the electrostatic chuck 18, and the heat is transferredto the electrostatic chuck 18 depending on the difficulty of heattransfer such as the degree of contact between the focus ring FR and theelectrostatic chuck 18. The difficulty of heat transfer, which is thethermal resistance, is inversely proportional to a sectional area normalto a heat transfer direction. For this reason, in FIG. 4, the difficultyof heat transfer from the focus ring FR to a surface of theelectrostatic chuck 18 is denoted as the thermal resistance R_(th)·A perunit area between the focus ring FR and the surface of the electrostaticchuck 18 where A is the area of the region (division region 75 b) wherethe heater HT2 is provided. R_(th) is a thermal resistance in the wholeregion where the heater HT2 is provided. Further, in FIG. 4, the heatinput amount from the focus ring FR to the surface of the electrostaticchuck 18 is denoted as heat flux q per unit area from the focus ring FRto the surface of the electrostatic chuck 18. Further, the thermalresistance R_(th)·A depends on the surface state of the electrostaticchuck 18, the value of a DC voltage applied from the DC power supply 22during the holding of the focus ring FR, and the pressure of the heattransfer gas supplied between an upper surface of the electrostaticchuck 18 and a rear surface of the focus ring FR. In addition, thethermal resistance R_(th)·A also depends on device parameters involvedin the thermal resistance or thermal conductivity.

The heat transferred to the surface of the electrostatic chuck 18increases the temperature of the electrostatic chuck 18 and is alsotransferred to the heater HT2. In FIG. 4, a heat input amount from thesurface of the electrostatic chuck 18 to the heater HT2 is denoted asheat flux q_(c) per unit area from the surface of the electrostaticchuck 18 to the heater HT2.

Meanwhile, the base 20 is cooled by a coolant flowing through thecoolant channel 24 and cools the electrostatic chuck 18 being in contacttherewith. At this time, in FIG. 4, a heat loss amount from a rearsurface of the electrostatic chuck 18 to the base 20 through the bondinglayer 19 is denoted as heat flux q_(sus) per unit area from the rearsurface of the electrostatic chuck 18 to the base 20. The heater HT2 iscooled by this heat loss, and thereby, the temperature is reduced.

The focus ring FR is consumed and its thickness becomes thinner byetching. In the plasma processing apparatus 10, when the focus ring FRis consumed and the thickness thereof is reduced, the amount of heatinput to the heater HT during plasma processing changes.

Here, the change in the amount of heat input to the heater HT2 due tothe consumption of the focus ring FR will be described. FIG. 5schematically shows a flow of energy before the focus ring is consumed.In addition, the heat input of the radiant heat is omitted due to asmall influence.

When the temperature of the heater HT2 is controlled to be constant, thesum of the heat input amount input to the heater HT2 and the heatgeneration amount generated by the heater HT2 is equal to the heat lossamount lost from the heater HT2, at a position of the heater HT2. Forexample, in a non-ignition state in which the plasma is not ignited, thesum of the heat generation amount generated by the heater HT2 is equalto the heat loss amount lost from the heater HT2. In an example of the“non-ignition state” shown in FIG. 5, the heat amount of “10” is lostfrom the heater HT2 by the cooling from the base 20. When thetemperature of the heater HT2 is controlled to be constant, the heatamount of “10” is generated in the heater HT2 by the heater power P_(h)from the heater power supply HP.

In an ignition state in which the plasma is ignited, the heat from theplasma is also input to the heater HT2 through the electrostatic chuck18. The ignition state includes a transient state and a steady state. Inthe transient state, for example, a heat input amount of the focusingring FR or the electrostatic chuck 18 is greater than the heat lossamount thereof, and thereby, the temperature of the focus ring FR or theelectrostatic chuck 18 tends to increase over time. In the steady state,the heat input amount and the heat loss amount of the focus ring FR orthe electrostatic chuck 18 are equal to each other, and thereby, thetemperature of the focus ring FR or the electrostatic chuck 18 does nottend to increase over time, and the temperature becomes substantiallyconstant.

Further, in the ignition state, the temperature of the focus ring FRincreases due to the heat input from the plasma until the wafer reachesthe steady state. To the heater HT2, heat is transferred from the focusring FR through the electrostatic chuck 18. As described above, when thetemperature of the heater HT2 is controlled to be constant, the heatamount input to the heater HT2 is equal to the heat amount lost from theheater HT2. The heat amount required for maintaining the temperature ofthe heater HT2 to be constant is reduced in the heater HT2. For thisreason, the power supplied to the heater HT2 is reduced.

For example, in an example of the “transient state” shown in FIG. 5, aheat amount of “5” is transferred from the plasma to the focus ring FR.Further, the heat transferred to the focus ring FR is transferred to theelectrostatic chuck 18. Further, when the temperature of the focus ringFR is not in the steady state, a part of the heat transferred to thefocus ring FR contributes to an increase of the temperature of the focusring FR. The heat amount contributing to the increase in the temperatureof the focus ring FR depends on the heat capacity of the focus ring FR.Therefore, the heat amount of “3” among the heat amount of “5”transferred to the focus ring FR is transferred from the focus ring FRto the surface of the electrostatic chuck 18. The heat transferred tothe surface of the electrostatic chuck 18 is transferred to the heaterHT2. Further, when the temperature of the electrostatic chuck 18 is notin the steady state, a part of the heat transferred to the surface ofthe electrostatic chuck 18 contributes to an increase in the temperatureof the electrostatic chuck 18. The heat amount contributing to theincrease in the temperature of the electrostatic chuck 18 depends on theheat capacity of the electrostatic chuck 18. Therefore, a heat amount of“2” among the heat amount of “3” transferred to the surface of theelectrostatic chuck 18 is transferred to the heater HT2. For thisreason, when the temperature of the heater HT2 is controlled to beconstant, a heat amount of “8” is supplied to the heater HT2 by theheater power P_(h) from the heater power supply HP.

Further, in an example of the “steady state” shown in FIG. 5, the heatamount of “5” is transferred from the plasma to the focus ring FR. Theheat transferred to the focus ring FR is transferred to theelectrostatic chuck 18. Further, when the temperature of the focus ringFR is in the steady state, the heat input amount and the heat outputamount of the focus ring FR are equal to each other. Therefore, the heatamount of “5” transferred from the plasma to the focus ring FR istransferred from the focus ring FR to the surface of the electrostaticchuck 18. The heat transferred to the surface of the electrostatic chuck18 is transferred to the heater HT2. When the temperature of theelectrostatic chuck 18 is in the steady state, a heat input amount and aheat output amount of the electrostatic chuck 18 are equal to eachother. Therefore, the heat amount of “5” transferred to the surface ofthe electrostatic chuck 18 is transferred to the heater HT2. For thisreason, when the temperature of heater HT2 is controlled to be constant,a heat amount of “5” is supplied to the heater HT2 by the heater powerP_(h) from the heater power supply HP.

FIG. 6 schematically shows a flow of energy after the focus ring isconsumed. The heat input of the radiant heat is omitted due to a smallinfluence. In FIG. 6, since the focus ring FR is consumed by theetching, the focus ring FR has a thickness thinner than that of FIG. 5.

In the non-ignition state, even when the focus ring FR is consumed andits thickness is reduced, the flow of energy is the same as that beforethe consumption of the focus ring FR shown in FIG. 5. In an example ofthe “non-ignition state” shown in FIG. 6, the heat amount of “10” islost from the heater HT2 by the cooling from the base 20. When thetemperature of the heater HT2 is controlled to be constant, the heatamount of “10” is generated in the heater HT2 by the heater power P_(h)from the heater power supply HP.

In the ignition state, the heat from the plasma is also input to theheater HT2 through the electrostatic chuck 18. When the focus ring FR isconsumed and its thickness is reduced, the heating time of the focusring FR is shortened.

For example, in an example of the “transient state” shown in FIG. 6, aheat amount of “5” is transferred from the plasma to the focus ring FR.Further, the heat transferred to the focus ring FR is transferred to theelectrostatic chuck 18. Further, when the temperature of the focus ringFR is not in the steady state, a part of the heat transferred to thefocus ring FR contributes to an increase of the temperature of the focusring FR. For example, when the focus ring FR is consumed and itsthickness is reduced, the heat amount of “4” among the heat amount of“5” transferred to the focus ring FR is transferred from the focus ringFR to the surface of the electrostatic chuck 18. The heat transferred tothe surface of the electrostatic chuck 18 is transferred to the heaterHT2. Further, when the temperature of the electrostatic chuck 18 is notin the steady state, a part of the heat transferred to the surface ofthe electrostatic chuck 18 contributes to an increase in the temperatureof the electrostatic chuck 18. The heat amount contributing to theincrease in the temperature of the electrostatic chuck 18 depends on theheat capacity of the electrostatic chuck 18. Therefore, a heat amount of“3” among the heat amount of “4” transferred to the surface of theelectrostatic chuck 18 is transferred to the heater HT2. For thisreason, when the temperature of the heater HT2 is controlled to beconstant, a heat amount of “7” is supplied to the heater HT2 by theheater power P_(h) from the heater power supply HP.

Further, in an example of the “steady state” shown in FIG. 6, the heatamount of “5” is transferred from the plasma to the focus ring FR. Theheat transferred to the focus ring FR is transferred to theelectrostatic chuck 18. Further, when the temperature of the focus ringFR is in the steady state, the heat input amount and the heat outputamount of the focus ring FR are equal to each other. Therefore, the heatamount of “5” transferred from the plasma to the focus ring FR istransferred from the focus ring FR to the surface of the electrostaticchuck 18. The heat transferred to the surface of the electrostatic chuck18 is transferred to the heater HT2. When the temperature of theelectrostatic chuck 18 is in the steady state, a heat input amount and aheat output amount of the electrostatic chuck 18 are equal to eachother. Therefore, the heat amount of “5” transferred to the surface ofthe electrostatic chuck 18 is transferred to the heater HT2. For thisreason, when the temperature of heater HT2 is controlled to be constant,a heat amount of “5” is supplied to the heater HT2 by the heater powerP_(h) from the heater power supply HP.

As illustrated in FIGS. 5 and 6, the power supplied to the heater HT2 islower in the ignition state than that in the non-ignition state.Further, in the ignition state, the power supplied to the heater HT2 islowered until the steady state. Further, in the transient state, even ifthe amount of heat input from the plasma is the same, the power suppliedto the heater HT2 changes depending on the thickness of the focus ringFR.

Further, as shown in FIGS. 5 and 6, when the temperature of the heaterHT2 is controlled to be constant, even if the state is any of the“non-ignition state,” the “transient state,” and the “steady state,” theheat amount of “10” is lost from the heater HT2 by the cooling from thebase 20. That is, the heat flux q_(sus) per unit area from the heaterHT2 to the coolant supplied to the coolant channel 24 formed inside thebase 20 is always constant, and a temperature gradient from the heaterHT2 to the coolant is always constant. For this reason, the temperaturesensor used to control the temperature of the heater HT2 to be constantdoes not need to be directly installed in the heater HT2. For example,the temperature difference between the heater HT2 and the temperaturesensor is always constant as long as the temperature sensor is installedbetween the heater HT2 and the coolant, such as the rear surface of theelectrostatic chuck 18, inside of the bonding layer 19, and inside ofthe base 20. Thus, by calculating the temperature difference ΔT betweenthe temperature sensor and the heater HT2 using thermal conductivity,thermal resistance, and the like of a material between the heater HT2and the temperature sensor and by adding the temperature difference ΔTto a value of the temperature detected by the temperature sensor, it ispossible to output the temperature of the heater HT2 and to control theactual temperature of the heater HT2 so as to be constant.

FIG. 7 shows an example of a change in the temperature of the focus ringand a change in the supply power to the heater. FIG. 7 illustrates anexample of a result of measuring the temperature of the focus ring FRand the supply power to the heater HT2 by controlling the temperature ofthe heater HT2 so as to be constant, and igniting the plasma from thenon-ignition state in which the plasma is not ignited. A solid lineshown in FIG. 7 denotes a change in the supply power to the heater HT2in the case of a new focus ring FR (before consumption). The dashed lineshown in FIG. 7 denotes a change in the supply power to the heater HT2in the case of the focus ring FR after the new focus ring FR is consumedand its thickness has become thinner than before.

A period T1 shown in FIG. 7 is the non-ignition state in which theplasma is not ignited. In the period T1, the supply power to the heaterHT2 is constant. A period T2 shown in FIG. 7 is the ignition state inwhich the plasma is ignited and in the transient state. In the periodT2, the supply power to the heater HT2 is decreased. In the period T2,the temperature of the focus ring FR increases to a certain temperature.A period T3 shown in FIG. 7 is the ignition state in which the plasma isignited. In the period T3, the temperature of the focus ring FR becomesconstant and in the steady state. If the electrostatic chuck 18 alsoenters the steady state, a tendency of the supply power to decreasestabilizes and the supply power to the heater HT2 becomes substantiallyconstant.

The tendency of the power supplied to the heater HT2 to decrease in thetransient state, illustrated in the period T2 of FIG. 7, is changed dueto the heat input amount from the plasma to the focus ring FR, thethermal resistance between the focus ring FR and the surface of theelectrostatic chuck 18, the thickness of the focus ring FR and the like.

As described above, when the temperature of the heater HT2 is controlledto be constant, the heater power P_(h) changes depending on the heatinput amount from the plasma to the focus ring FR, the thermalresistance between the focus ring FR and the surface of theelectrostatic chuck 18 and/or the thickness of the focus ring FR.Therefore, a graph of the supply power to the heater HT2 in the periodT2 shown in FIG. 7 may be modeled by taking the heat input amount fromthe plasma to the focus ring FR, the thermal resistance between thefocus ring FR and the surface of the electrostatic chuck 18 and/or thethickness of the focus ring FR as parameters. That is, a change in thesupply power to the heater HT2 in the period T2 may be modeled bycalculation equations by taking the heat input amount from the plasma tothe focus ring FR, the thermal resistance between the focus ring FR andthe surface of the electrostatic chuck 18 and the thickness of the focusring FR as parameters.

In the present embodiment, the change in the supply power to the heaterHT2 in the period T2 shown in FIG. 7 is modeled as an equation based onunit area. For example, the heat generation amount q_(h) from the heaterHT2 per unit area when a heat flux is generated from the plasma may beexpressed by the following equation (2) in an equation group 1. The heatgeneration amount q_(h0) from the heater HT per unit area in the steadystate when no heat flux is generated from the plasma may be expressed bythe following equation (3) in the equation group 1. The thermalresistance R_(thc)·A per unit area between the surface of theelectrostatic chuck 18 and the heater HT2 may be expressed by thefollowing equation (4) in the equation group 1. When a₁, a₂, a₃, λ₁, λ₂,τ₁, and τ₂ are expressed by the following equations (5) to (11) in theequation group 1 by taking the heat flux q_(p) and the thermalresistance R_(th) as parameters, the heat generation amount q_(h) may beexpressed by the following equation (1) in the equation group 1.

$\begin{matrix}\left( {{Equation}\mspace{14mu} {Group}\mspace{14mu} 1} \right) & \; \\{q_{h} = {q_{h\; 0} - q_{P} - {\frac{R_{th} \cdot A \cdot q_{P}}{R_{thc} \cdot A \cdot \left( {\lambda_{1} - \lambda_{2}} \right)}\left\{ {{\left( {1 + {\frac{a_{2} + a_{3}}{a_{1} \cdot a_{3}} \cdot \lambda_{2}}} \right)\left( {a_{1} + \lambda_{1}} \right)\exp \left( {- \frac{t}{\tau_{1}}} \right)} - {\left( {1 + {\frac{a_{2} + a_{3}}{a_{1} \cdot a_{3}} \cdot \lambda_{1}}} \right)\left( {a_{1} + \lambda_{2}} \right){\exp \left( {- \frac{t}{\tau_{2}}} \right)}}} \right\}}}} & (1) \\{\mspace{79mu} {q_{h} = {P_{h}\text{/}A}}} & (2) \\{\mspace{79mu} {q_{h\; 0} = {P_{h\; 0}\text{/}A}}} & (3) \\{\mspace{79mu} {{R_{thc} \cdot A} = \frac{z_{c}}{\kappa_{c}}}} & (4) \\{\mspace{79mu} {a_{1} = \frac{1}{\rho_{FR} \cdot C_{FR} \cdot z_{FR} \cdot R_{th} \cdot A}}} & (5) \\{\mspace{79mu} {a_{2} = \frac{2}{\rho_{c} \cdot C_{c} \cdot z_{c} \cdot R_{th} \cdot A}}} & (6) \\{\mspace{79mu} {a_{3} = \frac{2}{\rho_{c} \cdot C_{c} \cdot z_{c} \cdot R_{thc} \cdot A}}} & (7) \\{\mspace{79mu} {\lambda_{1} = {\frac{1}{2}\left\{ {{- \left( {a_{1} + a_{2} + a_{3}} \right)} + \sqrt{\left( {a_{1} + a_{2} + a_{3}} \right)^{2} - {4\; a_{1}a_{3}}}} \right\}}}} & (8) \\{\mspace{79mu} {\lambda_{2} = {\frac{1}{2}\left\{ {{- \left( {a_{1} + a_{2} + a_{3}} \right)} - \sqrt{\left( {a_{1} + a_{2} + a_{3}} \right)^{2} - {4\; a_{1}a_{3}}}} \right\}}}} & (9) \\{\mspace{79mu} {\tau_{1} = {- \frac{1}{\lambda_{1}}}}} & (10) \\{\mspace{79mu} {\tau_{2} = {- \frac{1}{\lambda_{2}}}}} & (11)\end{matrix}$

In the equation group 1, P_(h) is the heater power [W] when the heatflux is generated from the plasma.

P_(h0) is the heater power [W] in the steady state when no heat flux isgenerated from the plasma.

q_(h) is the heat generation amount [W/m²] from the heater HT2 per unitarea when the heat flux is generated from the plasma.

q_(h0) is the heat generation amount [W/m²] from the heater HT2 per unitarea in the steady state when no heat flux is generated from the plasma.

q_(p) is the heat flux [W/m²] per unit area from the plasma to the focusring FR.

R_(th)·A is the thermal resistance [K·m²/W] per unit area between thefocus ring FR and the surface of the electrostatic chuck 18.

R_(thc)·A is the thermal resistance [K·m²/W] per unit area between thesurface of the electrostatic chuck 18 and the heater.

A is the area [m²] of the division region 75 (the division region 75 b)in which the heater HT2 is provided.

ρ_(FR) is the density [kg/m³] of the focus ring FR.

C_(FR) is the heat capacity [J/K·m²] per unit area of the focus ring FR.

z_(FR) is the thickness [m] of the focus ring FR.

ρ_(c) is the density [kg/m³] of ceramic forming the electrostatic chuck18.

C_(c) is the heat capacity [J/K·m²] per unit area of the ceramic formingthe electrostatic chuck 18.

z_(c) is the distance [m] from the surface of the electrostatic chuck 18to the heater HT2.

κ_(c) is the thermal conductivity [W/K·m] of the ceramic forming theelectrostatic chuck 18.

t is the elapsed time [sec] after the plasma is ignited.

Regarding a₁ expressed in the equation (5), 1/a₁ is a time constantindicating the difficulty of warming the focus ring FR. Further, withrespect to a₂ expressed in the equation (6), 1/a₂ is a time constantindicating the difficulty of heat input into the electrostatic chuck 18and the difficulty of warming the electrostatic chuck 18. Further, withrespect to a₃ expressed in the equation (7), 1/a₃ is a time constantindicating the difficulty of heat infiltration into the electrostaticchuck 18 and the difficulty of warming the electrostatic chuck 18.

The density ρ_(FR) of the focus ring FR and the heat capacity C_(FR) perunit area of the focus ring FR are determined in advance from an actualconfiguration of the focus ring FR, respectively. The area A of theheater HT2, the density ρ_(c) of ceramic forming the electrostatic chuck18, and the heat capacity C_(c) per unit area of the ceramic forming theelectrostatic chuck 18 are determined in advance from the actualconfiguration of the plasma processing apparatus 10, respectively. Thedistance z_(c) from the surface of the electrostatic chuck 18 to theheater HT2 and the thermal conductivity κ_(c) of the ceramic forming theelectrostatic chuck 18 are also determined in advance from the actualconfiguration of the plasma processing apparatus 10. R_(thc)·A isdetermined in advance by the equation (4) from the thermal conductivityκ_(c) and the distance z_(c).

The thickness z_(FR) of the focus ring FR is determined to be a specificvalue in the case of the new focus ring FR, but the value of thethickness z_(FR) changes as the new focus ring FR is consumed byetching. Therefore, when the focus ring FR is consumed, the thicknessz_(FR) of the focus ring FR also becomes a parameter.

The plasma processing apparatus 10 may perform plasma processings withvarious process recipes. The heat input amount from the plasma to thefocus ring FR and the thermal resistance between the focus ring FR andthe surface of the electrostatic chuck 18 during the plasma processingcan be obtained as follows.

For example, the plasma processing apparatus 10 performs the plasmaprocessing after a new focus ring FR is disposed and measures the heaterpower P_(h0) of the heater HT2 during the plasma processing.

The heater power P_(h) when there is heat flux from the plasma for eachelapsed time t after the plasma is ignited, and the heater power P_(h0)in the steady state when there is no heat flux from the plasma may beobtained from the measurement results therefor in the plasma processingapparatus 10. As expressed by the equation (2), by dividing the obtainedheater power P_(h) by the area A of the heater HT2, the heat generationamount q_(h) of the heater HT2 per unit area when there is the heat fluxfrom the plasma may be obtained. Further, as expressed by the equation(3), by dividing the obtained heater power P_(h0) by the area A of theheater HT2, the heat generation amount q_(h0) of the heater HT2 per unitarea in the steady state when there is no heat flux from the plasma maybe obtained. As for the thickness z_(FR) of the focus ring FR, in thecase of the new focus ring FR, the value of the thickness of the newfocus ring FR can be used. The thickness of the new focus ring FR may bestored in the storage unit 104 through an input from the user interface103 or the like, and the value of the thickness stored in the storageunit 104 may be used. Alternatively, the thickness of the new focus ringFR may be obtained by measuring the value thereof by another measuringdevice through a network or the like.

The heat flux q_(p) and the thermal resistance R_(th)·A are obtained byperforming fitting of the measurement results by using the equations (1)to (11) as the calculation model.

In other words, when the thickness of the focus ring FR is determined tobe a specific value as in the case of the new focus ring FR, the plasmaprocessing apparatus 10 performs the fitting with the equations (1) to(11) by using the measurement results, so that the heat flux q_(p) andthe thermal resistance R_(th)·A can be obtained.

In the steady state of FIGS. 5 and 6, the heat input amount from theplasma to the focus ring FR is added from the non-ignition state and isinput to the heater HT2 without mitigation. For this reason, the heatinput amount from the plasma to the focus ring FR may be calculated froma value of the difference between the supply power in the non-ignitionstate of the period T1 and the supply power in the steady state of theperiod T3 shown in FIG. 7. For example, the heat flux q_(p) may becalculated from a value obtained by calculating a difference between theheater power P_(h0) (in the non-ignition state) when there is no heatflux from the plasma and the heater power P_(h) in the steady state ofthe period T3 and converting the difference into a value per unit area,as expressed by the following equation (12). Further, the heat fluxq_(p) may be calculated from a difference between the heat generationamount q_(h0) from the heater HT2 per unit area and the heat generationamount q_(h) from the heater HT2 per unit area, as expressed by thefollowing equation (12).

q _(p)=(P _(h0) −P _(h))/A=q _(h0) −q _(h)  (12)

In this manner, the heat input amount from the plasma to the focus ringFR and the thermal resistance between the focus ring FR and the surfaceof the electrostatic chuck 18 during the plasma processing are obtained.The plasma processing apparatus 10 performs the same plasma processingon each of the loading and unloading wafers W. In this case, the heatinput amount from the plasma to the focus ring FR and the thermalresistance between the focus ring FR and the surface of theelectrostatic chuck 18 in each plasma processing can be considered to bethe same. When the heat input amount and the thermal resistance areobtained, the thickness z_(FR) of the focus ring FR can be obtained asfollows.

For example, the plasma processing apparatus 10 performs the plasmaprocessing and measures the heater power P_(h0) of the heater HT2 duringthe plasma processing.

The heater power P_(h) when there is heat flux from the plasma for eachelapsed time t after the plasma is ignited, and the heater power P_(h0)in the steady state when there is no heat flux from the plasma may beobtained from the measurement results in the plasma processing apparatus10. Then, as expressed by the equation (2), by dividing the obtainedheater power P_(h) by the area A of the heater HT2, the heat generationamount q_(h) of the heater HT2 per unit area when there is the heat fluxfrom the plasma may be obtained. Further, as expressed by the equation(3), by dividing the obtained heater power P_(h0) by the area A of theheater HT2, the heat generation amount q_(h0) of the heater HT2 per unitarea in the steady state when there is no heat flux from the plasma maybe obtained. For the heat flux q_(p) and the thermal resistanceR_(th)·A, values obtained using a new focus ring FR are used, forexample.

The thickness z_(FR) of the focus ring FR can be obtained by performingthe fitting of the measurement results by using the above equations (1)to (11) as the calculation model.

In other words, when the heat flux q_(p) and the thermal resistanceR_(th)·A are determined in advance, the plasma processing apparatus 10uses the measurement results to perform the fitting with the equations(1) to (11), thereby obtaining the thickness z_(FR) of the focus ringFR.

Further, the graph of the temperature of the focus ring FR in the periodT2 shown in FIG. 7 may also be modeled by taking the heat input amountfrom the plasma to the focus ring FR, the thermal resistance between thefocus ring FR and the surface of the electrostatic chuck 18, and thethickness of the focus ring FR as parameters. In the present embodiment,a change in the temperature of the focus ring FR in the period T2 ismodeled as an equation based on unit area. For example, when a₁, a₂, a₃,λ₁, λ₂, τ₁, and τ₂ illustrated in the equations (5) to (11) are used bytaking the heat flux q_(p), the thermal resistance R_(th)·A, and thethickness z_(FR) as parameters, a temperature T_(FR) of the focus ringFR may be expressed by the following equation (13).

$\begin{matrix}{T_{FR} = {T_{h} + {q_{p} \cdot \left( {{R_{th} \cdot A} + {R_{thc} \cdot A}} \right)} + {\frac{q_{p}}{\rho_{FR} \cdot C_{FR} \cdot z_{FR} \cdot \left( {\lambda_{1} - \lambda_{2}} \right)}\left\{ {{\left( {1 + {\frac{a_{2} + a_{3}}{a_{1} \cdot a_{3}} \cdot \lambda_{2}}} \right){\exp \left( {- \frac{t}{\tau_{1}}} \right)}} - {\left( {1 + {\frac{a_{2} + a_{3}}{a_{1} \cdot a_{3}} \cdot \lambda_{1}}} \right){\exp \left( {- \frac{t}{\tau_{2}}} \right)}}} \right\}}}} & (13)\end{matrix}$

Here, T_(FR) is the temperature [° C.] of the focus ring. T_(h) is thetemperature [° C.] of the heater HT2 that is controlled to be constant.

The temperature T_(h) of the heater may be obtained from the conditionsat the actual time of controlling the temperature of the focus ring FRto be constant.

When the heat flux q_(p), the thermal resistance R_(th)·A and thethickness z_(FR) are obtained, the temperature T_(FR) of the focus ringFR may be calculated from the equation (13).

When the elapsed time t is sufficiently longer than the time constantsτ₁ and τ₂ expressed in the equations (10) and (11), the equation (13)may be omitted as in the following equation (14). That is, in a case ofcalculating the temperature T_(h) of the heater HT2 when the temperatureT_(FR) of the focus ring FR becomes a target temperature aftertransition to the steady state of the period T3 shown in FIG. 7, theequation (13) may be expressed as the following equation (14).

T _(FR) =T _(h) +q _(p)·(R _(th) ·A+R _(thc) ·A)  (14)

For example, the temperature T_(FR) of the focus ring FR may be obtainedfrom the temperature T_(h) of the heater, the heat flux q_(p), and thethermal resistances R_(th)·A and R_(thc)·A by the equation (14).

Referring back to FIG. 3, the heater control unit 102 a controlstemperatures of the respective heaters HT. For example, the heatercontrol unit 102 a outputs, to the heater power supply HP, control dataindicating a supply power to each heater HT to control the supply powersupplied from the heater power supply HP to each heater HT, therebycontrolling temperatures of the respective heaters HT.

At the time of the plasma processing, a target setting temperature ofeach heater HT is set in the heater control unit 102 a. For example, atarget temperature is set as the setting temperature of the heater HTfor each division region 75 of the mounting region 18 a in the heatercontrol unit 102 a. The target temperature may be a temperature at whichthe plasma etching accuracy is the best.

The heater control unit 102 a controls the supply power to each heaterHT such that each heater HT achieves the setting temperature at the timeof the plasma processing. For example, the heater control unit 102 acompares the temperature of each division region 75 of the mountingregion 18 a represented by the temperature data input to the externalinterface 101 with the setting temperature of the corresponding divisionregion 75. This comparison is carried out for each division region 75.By using the comparison results, the heater control unit 102 a specifiesthe division region 75 having a temperature lower than the settingtemperature and the division region 75 having a temperature higher thanthe setting temperature. The heater control unit 102 a outputs, toheater power supply HP, control data for increasing the supply power tothe division region 75 having a temperature lower than the settingtemperature and control data for reducing the supply power to thedivision region 75 having a temperature higher than the settingtemperature.

The measurement unit 102 b measures the supply power supplied to eachheater HT. In the present embodiment, the measurement unit 102 bmeasures the supply power to the heater HT2 by using the supply power tothe heater HT2 represented by the power data input to the externalinterface 101. For example, the measurement unit 102 b measures thesupply power to the heater HT2 when the plasma processing is performedwhile the supply power to the heater HT2 is controlled by the heatercontrol unit 102 a such that the temperature of the heater HT2 isconstant. For example, the measurement unit 102 b measures the supplypower to the heater HT2 in a non-ignition state where the plasma is notignited before the start of the plasma processing. Further, themeasurement unit 102 b measures the supply power to the heater HT2 in atransient state before the tendency of the supply power to the heaterHT2 to decrease stabilizes such that the supply power to the heater HTbecomes constant after the plasma is ignited. Further, after the plasmais ignited, the measurement unit 102 b measures the supply power to theheater HT2 in a steady state where the decrease of the supply power tothe heater HT2 is stopped and the supply power to the heater HT2 becomesconstant. The supply power to the heater HT2 in the non-ignition statemay be measured at least once, or an average of values obtained bymeasuring several times may be set as the supply power in thenon-ignition state. The supply power to the heater HT2 in the transientstate and the steady state may be measured twice or more. Further, thetiming of measuring the supply power may include the timing when thetendency of the supply power to decrease is large. Further, when thenumber of times of measurement is small, the measurement timing may beseparated by a predetermined period of time. In the present embodiment,the measurement unit 102 b measures the supply power to the heater HT2at a predetermined time interval (e.g., at an interval of 0.1 second)during the plasma processing. Therefore, the supply power to the heaterHT2 in the transient state and the steady state is measured severaltimes.

The measurement unit 102 b measures the supply power to the heater HT2in the non-ignition state and the supply power to the heater HT2 in thetransient state in a predetermined cycle. For example, when the plasmaprocessing is performed after the focus ring FR is replaced and a waferW and a new focus ring FR that have not been consumed are mounted on themounting table 16, the measurement unit 102 b measures the supply powerto the heater HT2 in the non-ignition state and the supply power to theheater HT2 in the transient state. The measurement unit 102 b measuresthe supply power to the heater HT2 in the non-ignition state and thesupply power to the heater HT2 in the transient state whenever the waferW is replaced and the replaced wafer W is mounted on the mounting table16 to perform the plasma processing. Further, for example, the parametercalculation unit 102 c may measure the supply power to the heater HT2 inthe non-ignition state and the supply power to the heater HT2 in thetransient state for each plasma processing.

The parameter calculation unit 102 c calculates a heat input amount anda thermal resistance by using the supply power in the non-ignition stateand the supply power in the transient state measured by the measurementunit 102 b when a new focus ring FR is placed on the mounting table 16and the plasma processing is performed.

First, the parameter calculation unit 102 c calculates the heatgeneration amount of the heater HT2 for maintaining the temperature ofthe heater HT2 at a predetermined temperature in the non-ignition state.For example, the parameter calculation unit 102 c calculates the heaterpower P_(h0) in the non-ignition state from the supply power to theheater HT2 in the non-ignition state.

Further, the parameter calculation unit 102 c calculates the thermalresistance between the focus ring FR and the mounting table 16 and theheat input amount flowing into the mounting table 16 from the plasma inthe ignition state. For example, the parameter calculation unit 102 ccalculates the heat input amount and the thermal resistance byperforming the fitting with a calculation model, which has the heatinput amount and the thermal resistance as parameters and calculates thesupply power in the transient state, by using the supply power in thenon-ignition state and the supply power in the transient state.

For example, the parameter calculation unit 102 c calculates the heaterpower P_(h0) of the heater HT2 in the non-ignition state for eachelapsed time t. Further, the parameter calculation unit 102 c calculatesthe heater power P_(h) of the heater HT2 in the transient state for eachelapsed time t. The parameter calculation unit 102 c calculates the heatgeneration amount q_(h0) from the heater HT2 per unit area in thenon-ignition state for each elapsed time t by dividing the calculatedheater power P_(h0) by an area A for the heater HT2. Further, theparameter calculation unit 102 c calculates the heat generation amountq_(h) from the heater HT2 per unit area in the transient state for eachelapsed time t by dividing the calculated heater power P_(h) by the areaA for the heater HT2.

In addition, the parameter calculation unit 102 c performs the fittingof the heat generation amount q_(h) and the heat generation amountq_(h0) for each elapsed time t by using the equations (1) to (11) as thecalculation model, and calculates the heat flux q_(p) and the thermalresistance R_(th)·A having the lowest degree of error. The thicknessvalue of the new focus ring FR is used as the thickness z_(FR) of thefocus ring FR.

Further, the parameter calculation unit 102 c may calculate the heatinput amount from the plasma to the focus ring FR from the differencebetween the supply power in the non-ignition state and the supply powerin the steady state. For example, the parameter calculation unit 102 cmay calculate the heat flux q_(p) by dividing the difference between theheater power P_(h0) in the non-ignition state and the heater power P_(h)in the steady state by the area A of the heater HT2 by using theequation (12).

When the heat flux q_(p) and the thermal resistance R_(th)·A during theplasma processing in the plasma processing apparatus 10 are given inadvance by experiments or other methods, it is not necessary tocalculate the heat flux q_(p) and the thermal resistance R_(th)·A.

Next, the parameter calculation unit 102 c calculates the thicknessz_(FR) of the focus ring FR by using the supply power in thenon-ignition state and the supply power in the transient state measuredby the measurement unit 102 b when the wafer W is replaced and thereplaced wafer W is mounted on the mounting table 16 and the plasmaprocessing is performed.

First, the parameter calculation unit 102 c calculates the heatgeneration amount of the heater HT2 for maintaining the temperature ofthe heater HT2 at a predetermined temperature in the non-ignition state.For example, the parameter calculation unit 102 c calculates the heaterpower P_(h0) in the non-ignition state from the supply power to theheater HT2 in the non-ignition state.

Then, the parameter calculation unit 102 c calculates the thicknessz_(FR) of the focus ring FR. For example, the parameter calculation unit102 c calculate the thickness z_(FR) of the focus ring FR by performingthe fitting with a calculation model, which has the thickness z_(FR) ofthe focus ring FR as a parameter and calculates the supply power in thetransient state, by using the supply power in the non-ignition state andthe supply power in the transient state.

For example, the parameter calculation unit 102 c calculates the heaterpower P_(h0) of the heater HT2 in the non-ignition state for eachelapsed time t. Further, the parameter calculation unit 102 c calculatesthe heater power P_(h) of the heater HT2 in the transient state for eachelapsed time t. The parameter calculation unit 102 c calculates the heatgeneration amount q_(h0) from the heater HT2 per unit area in thenon-ignition state for each elapsed time t by dividing the calculatedheater power P_(h0) by an area A for the heater HT2. Further, theparameter calculation unit 102 c calculates the heat generation amountq_(h) from the heater HT2 per unit area in the transient state for eachelapsed time t by dividing the calculated heater power P_(h) by the areaA for the heater HT2.

In addition, the parameter calculation unit 102 c performs the fittingof the thickness z_(FR) of the focus ring FR by using the equations (1)to (11) as the calculation model, and calculates the thickness z_(FR) ofthe focus ring FR having the lowest degree of error. The values of theheat flux q_(p) and the thermal resistance R_(th)·A obtained by usingthe new focus ring FR are used as the heat flux q_(p) and the thermalresistance R_(th)·A. Alternatively, when the heat flux q_(p) and thethermal resistance R_(th)·A are given in advance by experiments or othermethods, the values of the given heat flux q_(p) and the given thermalresistance R_(th)·A may be used.

As a result, the plasma processing apparatus 10 according to the presentembodiment is capable of determining the thickness z_(FR) of theconsumed focus ring FR.

Here, when the plasma processing is continued, the focus ring FR isfurther consumed. For this reason, it is important for the plasmaprocessing apparatus to check the thickness of the focus ring FR in atimely manner. However, since the focus ring FR is installed in theprocessing chamber 12, it is not possible to directly measure thethickness of the focus ring FR. Therefore, in the conventional plasmaprocessing apparatus, the replacement time of the focus ring isdetermined based on the past results such as the number of processedwafers W or whether the focus ring should be replaced or not isdetermined by periodically processing the wafer W in which the etchingcharacteristics on the outer peripheral portion of the wafer ismonitored.

However, the plasma processing apparatus may perform the processingswith different process recipes. For this reason, the plasma processingapparatus requires the use of a replacement time that gave a certainamount of margin to the past results and, thus, the productivity of theplasma processing apparatus decreases. Further, the periodic processingof the wafer that is monitored also decreases the productivity of theplasma processing apparatus.

Therefore, for example, it is conceivable to arrange sensors in theprocessing chamber 12 and measure the thickness of the focus ring FRwith the sensors. However, when the sensors are disposed in theprocessing chamber 12, the manufacturing cost of the plasma processingapparatus 10 increases. Further, when the sensors are disposed in theprocessing chamber 12, the sensors become a singular point anddeteriorate the uniformity of the plasma processing around the singularpoint. Therefore, it is desirable to obtain the thickness of the focusring FR in the plasma processing apparatus without disposing the sensorsin the processing chamber 12.

The plasma processing apparatus 10 according to the present embodimentcan obtain the thickness of the focus ring FR without disposing thesensors in the processing chamber 12, and the degree of the consumptionof the focus ring FR can be determined from the thickness of the focusring FR. As described above, since the plasma processing apparatus 10according to the present embodiment can obtain the thickness of thefocus ring FR, it can be used as follows. For example, in a system inwhich a plurality of plasma processing apparatuses 10 are arranged toetch the wafer W, it is controlled such that the number of wafers W tobe processed in the plasma processing apparatus 10 with a smallconsumption amount of the focus ring FR is increased to adjust themaintenance timing of the plasma processing apparatus 10. As a result,the maintenance downtime of the entire system can be shortened, and theproductivity can be improved.

The setting temperature calculation unit 102 d calculates a settingtemperature of the heater HT2 at which the focus ring FR reaches atarget temperature by using the calculated heat input amount, thermalresistance, and thickness z_(FR) of the focus ring FR. For example, thesetting temperature calculation unit 102 d substitutes the calculatedheat flux q_(p), the calculated thermal resistance R_(th)·A, and thecalculated thickness z_(FR) of the focus ring FR into the equations (5),(6), and (12) to obtain the values of a₁, a₂, a₃, λ₁, λ₂, τ₁, and τ₂expressed in the equations (5) to (11). The setting temperaturecalculation unit 102 d uses the obtained a₁, a₂, a₃, λ₁, λ₂, τ₁, and τ₂to calculate the temperature T_(h) of the heater HT2 at which thetemperature T_(FR) of the focus ring FR becomes the target temperaturefrom the equation (12). For example, the setting temperature calculationunit 102 d calculates the temperature T_(h) of the heater HT2 at whichthe temperature T_(FR) of the focus ring FR becomes the targettemperature by setting the elapsed time t as a predetermined value largeenough to be regarded as the steady state. The calculated temperatureT_(h) of the heater HT2 is the temperature of the heater HT2 that makesthe temperature of the focus ring FR reach the target temperature.Further, the temperature T_(h) of the heater HT2 at which thetemperature of the focus ring FR becomes the target temperature may beobtained from the equation (13).

In addition, the setting temperature calculation unit 102 d maycalculate the temperature T_(FR) of the focus ring FR at the currenttemperature T_(h) of the heater HT2 from the equation (14). For example,the setting temperature calculation unit 102 d calculates thetemperature T_(FR) of the focus ring FR at the current temperature T_(h)of the heater HT2 when the elapsed time t is set to a predeterminedvalue large enough to be regarded as the steady state. Next, the settingtemperature calculation unit 102 d calculates a difference ΔT_(FR)between the calculated temperature T_(FR) and the target temperature.Then, the setting temperature calculation unit 102 d may calculate thetemperature obtained by subtracting the difference ΔT_(FR) from thecurrent temperature T_(h) of the heater HT2 as the temperature of theheater HT2 at which the temperature of the focus ring FR becomes thetarget temperature.

The setting temperature calculation unit 102 d corrects the settingtemperature of the heater HT2 set in the heater control unit 102 a tothe temperature of the heater HT2 that makes the temperature of thefocus ring FR reach the target temperature.

Therefore, the plasma processing apparatus 10 according to the presentembodiment may accurately control the temperature of the focus ring FRduring the plasma processing to the target temperature.

The alarm unit 102 e issues an alarm based on a change in the thicknessz_(FR) of the focus ring FR calculated in a predetermined cycle by theparameter calculation unit 102 c. For example, the alarm unit 102 eissues the alarm when the thickness z_(FR) of the focus ring FR is equalto or smaller than a predetermined threshold indicating the replacementtime. The alarm may be in any manner as long as the replacement time canbe notified to a process manager, an operator of the plasma processingapparatus 10, or the like. For example, the alarm unit 102 e displays amessage notifying the replacement time on the user interface 103.

Accordingly, the plasma processing apparatus 10 according to the presentembodiment may inform of the replacement time of the focus ring FR dueto its consumption.

(Flow of Processing)

Next, a flow of a determination process that includes a calculationprocess in which the plasma processing apparatus 10 calculates thethickness of the focus ring FR, and determines the replacement time ofthe focus ring FR from the calculated thickness of the focus ring FRwill be described. FIG. 8 is a flowchart showing an example of the flowof the determination process according to the first embodiment. Thisdetermination process is performed at a predetermined timing, e.g., at atiming when the plasma processing apparatus 10 starts the plasmaprocessing.

The heater control unit 102 a controls a supply power to each heater HTsuch that each heater HT reaches a setting temperature (step S10).

While the heater control unit 102 a controls the supply power to eachheater HT such that the temperature of each heater HT becomes a constantsetting temperature, the measurement unit 102 b measures the supplypower to the heater HT2 in the non-ignition and the supply power to theheater HT2 in the transient state (step S11).

The parameter calculation unit 102 c determines whether the thickness ofthe focus ring FR is known or not (step S12). For example, when theplasma processing is the initial plasma processing after the focus ringFR is replaced, if the focus ring FR is new, it is determined that thedesign dimensions are known and the thickness of the focus ring is alsoknown. Further, when the replaced focus ring FR is the used focus ringFR, if the thickness of the focus ring FR is measured in advance with,e.g., a micrometer before the replacement, it is determined that thethickness of the focus ring FR is known. It is also preferred thatwhether or not the thickness of the focus ring FR is known may be inputfrom the user interface 103, and the parameter calculation unit 102 cdetermines whether or not the thickness of the focus ring FR is knownusing the input result. For example, the plasma processing apparatus 10is configured such that the thickness of the focus ring FR may be inputfrom the user interface 103. When the thickness of the focus ring FR isinput from the user interface 103, the parameter calculation unit 102 cmay determine whether or not the thickness of the focus ring FR isknown. Alternatively, the thickness value of the focus ring FR such as anew focus ring FR whose thickness is known may be stored in the storageunit 104, and then the thickness of the focus ring FR may be selectivelyinput from the user interface 103.

When the thickness of the focus ring FR is known (YES in step S12), theparameter calculation unit 102 c calculates a heat input amount and athermal resistance by using the supply power in the non-ignition stateand the supply power in the transient state measured by the measurementunit 102 b (step S13). For example, the parameter calculation unit 102 cperforms the fitting of the heat generation amount q_(h) and the heatgeneration amount q_(h0) for each elapsed time t by using the equations(1) to (11) as the calculation model, and calculates the heat flux q_(p)and the thermal resistance R_(th)·A having the lowest degree of error.The known thickness value of the focus ring FR is used as the thicknessz_(FR) of the focus ring FR.

The parameter calculation unit 102 c stores the calculated heat fluxq_(p) and the calculated thermal resistance R_(th)·A in the storage unit104 (step S14), and the process is terminated.

When the thickness of the focus ring FR is unknown (NO in step S12), theparameter calculation unit 102 c calculates the thickness z_(FR) of thefocus ring FR by using the supply power in the non-ignition state andthe supply power in the transient state measured by the measurement unit102 b (step S15). For example, the parameter calculation unit 102 cperforms the fitting of the thickness z_(FR) of the focus ring FR byusing the equations (1) to (11) as the calculation model, and calculatesthe thickness z_(FR) of the focus ring FR having the lowest degree oferror. As for the heat flux q_(p) and the thermal resistance R_(th)·A,the values stored in the storage unit 104 in step S14 are used, forexample.

The alarm unit 102 e determines whether the thickness z_(FR) of thefocus ring FR calculated by the parameter calculation unit 102 c isequal to or smaller than the predetermined threshold (step S16). If itis determined that the thickness z_(FR) of the focus ring FR is notequal to or smaller than the predetermined threshold (NO in step S16),the process is terminated.

On the other hand, if it is determined that the thickness z_(FR) of thefocus ring FR is equal to or smaller than the predetermined threshold(YES in step S16), the alarm unit 102 e issues an alarm (step S17) andthe process is terminated.

As described above, the plasma processing apparatus 10 according to thepresent embodiment includes the mounting table 16, the heater controlunit 102 a, the measurement unit 102 b, and the parameter calculationunit 102 c. The mounting table 16 includes the heater HT2 configured toadjust the temperature of the mounting surface on which the focus ringFR that is consumed by the plasma processing is mounted. The heatercontrol unit 102 a controls the supply power supplied to the heater HT2such that the temperature of the heater HT2 becomes a settingtemperature. While the heater control unit 102 a controls the supplypower to the heater HT2 such that the temperature of the heater HT2becomes constant, the measurement unit 102 b measures the supply powerin the non-ignition state where the plasma is not ignited and the supplypower in the transient state where the supply power to the heater HT2 isdecreased after the plasma is ignited. The parameter calculation unit102 c calculates the thickness z_(FR) of the focus ring FR by performingthe fitting of the thickness z_(FR) of the focus ring FR with thecalculation model, which has the thickness z_(FR) of the focus ring FRas a parameter and calculates the supply power in the transient state,by using the supply power in the non-ignition state and the supply powerin the transient state measured by the measurement unit 102 b. As aresult, the plasma processing apparatus 10 determines the thickness ofthe focus ring FR and further determine the degree of consumption of thefocus ring FR from the thickness of the focus ring FR.

Moreover, the measurement unit 102 b measures the supply power in thenon-ignition state and the supply power in the transient state in apredetermined cycle. The parameter calculation unit 102 c calculates thethickness z_(FR) of the focus ring FR by using the supply power in thenon-ignition state and the supply power in transient supply powermeasured in each predetermined cycle. The alarm unit 102 e issues thealarm based on the change in the thickness z_(FR) of the focus ring FRcalculated by the parameter calculation unit 102 c. Accordingly, theplasma processing apparatus 10 can notify the replacement time due tothe consumption of the focus ring FR.

Second Embodiment

Next, a schematic configuration of the plasma processing apparatus 10according to a second embodiment will be described. FIG. 9 is across-sectional view showing an example of a schematic configuration ofa plasma processing apparatus according to the second embodiment. Aconfiguration of the plasma processing apparatus 10 according to thesecond embodiment is basically the same as that of the plasma processingapparatus 10 according to the first embodiment shown in FIG. 1.Therefore, the difference therebetween is mainly described hereinafter,and like reference numerals will be given to like parts and redundantdescription thereof will be omitted.

The mounting table 16 according to the second embodiment is divided intoa first mounting table 60 that supports the wafer W and a secondmounting table 70 that supports the focus ring FR.

The first mounting table 60 has a substantially cylindrical shape withupper and lower surfaces directed vertically. An upper surface of thefirst mounting table 60 serves as a mounting surface 60 d on which thewafer W is mounted. The mounting surface 60 d of the first mountingtable 60 has substantially the same size as the wafer W. The firstmounting table 60 includes an electrostatic chuck 61 and a base 62.

The base 62 is made of a conductive metal, e.g., aluminum having ananodically oxidized surface or the like. The base 62 serves as a lowerelectrode. The base 62 is supported by the supporting member 14 made ofan insulator.

The electrostatic chuck 61 has a flat disc-shaped upper surface servingas the mounting surface 60 d on which the wafer W is mounted. Theelectrostatic chuck 61 is provided at a central portion of the firstmounting table 60 when seen from the top. The electrostatic chuck 61includes an electrode E1. The electrostatic chuck 61 further includesthe heater HT1.

A second mounting table 70 is provided to surround an outer peripheralsurface of the first mounting table 60. The second mounting table 70 isformed in a cylindrical shape whose inner diameter is greater than anouter diameter of the first mounting table 60 by a predetermined value.The first mounting table 60 and the second mounting table 70 arecoaxially arranged. The second mounting table 70 has an upper surfaceserving as a mounting surface 70 d on which the focus ring FR ismounted.

The second mounting table 70 includes a base 71 and a focus ring heaterunit 72. The base 71 is made of a conductive metal similar to that ofthe base 62. The base 71 is made of, e.g., aluminum having an anodicallyoxidized surface or the like. A lower portion of the base 62 is greaterin a diametrical direction than an upper portion of the base 62 andextends in a flat plate shape up to a position of the lower part of thesecond mounting table 70. The base 71 is supported by the base 62. Thefocus ring heater unit 72 is supported by the base 71. The focus ringheater unit 72 has an annular shape with a flat upper surface serving asa mounting surface 70 d on which the focus ring FR is mounted. The focusring heater unit 72 includes the heater HT2.

A coolant channel 24 a is formed in the base 62. The coolant is suppliedto the coolant channel 24 a from the chiller unit through the line 26 a.The coolant supplied to the coolant channel 24 a returns to the chillerunit through a line 26 b. Further, a coolant channel 24 b is formed inthe base 71. The coolant is supplied to the coolant channel 24 b fromthe chiller unit through a line 27 a. The coolant supplied to thecoolant channel 24 b returns to the chiller unit through a line 27 b.The coolant channel 24 a is positioned below the wafer W and absorbsheat of the wafer W. The coolant channel 24 b is positioned below thefocus ring FR and absorbs heat of the focus ring FR.

Further, the upper electrode 30 is provided above the first mountingtable 60 to face the first mounting table 60 in parallel therewith. Theupper electrode 30 has a plurality of electromagnets 80 arranged on anupper surface of the upper electrode 30. In the present embodiment,three electromagnets 80 a to 80 c are arranged on the upper surface ofthe upper electrode 30. The electromagnet 80 a has a disc shape and isarranged on the upper surface of the upper electrode 30 that correspondsto the central portion of the first mounting table 60. The electromagnet80 b has an annular shape to surround the electromagnet 80 a and isarranged on the upper surface of the upper electrode 30 that correspondsto an outer peripheral portion of the first mounting table 60. Theelectromagnet 80 c has an annular shape has a size greater than theelectromagnet 80 b to surround the electromagnet 80 b and is arranged onthe upper surface of the upper electrode 30 that corresponds to thesecond mounting table 70.

The electromagnets 80 a to 80 c are individually connected to a powersupply (not shown) and individually generate magnetic fields by powerssupplied from the power supply. The power supplied from the power supplyto each of the electromagnets 80 a to 80 c is controlled by the controlunit 100. The control unit 100 controls the power supply to control thepower supplied to each of the electromagnets 80 a to 80 c, and thus themagnetic field generated from each of the electromagnets 80 a to 80 ccan be controlled.

(Configuration of Control Unit)

Next, the control unit 100 will be described in detail. FIG. 10 is ablock diagram showing an example of a schematic configuration of thecontrol unit that controls the plasma processing apparatus according tothe second embodiment. A configuration of the control unit 100 accordingto the second embodiment is basically the same as that of the controlunit 100 according to the first embodiment shown in FIG. 3. Therefore,the difference therebetween is mainly described hereinafter, and likereference numerals will be given to like parts and redundant descriptionthereof will be omitted.

The storage unit 104 stores therein correction information 104 a.Further, the correction information 104 a may be stored in acomputer-readable storage medium (e.g., a hard disk, an optical disksuch as a DVD, a flexible disk, a semiconductor memory, or the like).Alternatively, the correction information 104 a may be stored in anotherdevice and may be read and used online through, e.g., a dedicated line.

The correction information 104 a is data in which various types ofinformation used for correcting the plasma processing conditions arestored. Details of the correction information 104 a will be describedlater.

The process controller 102 further has a function of a plasma controlunit 102 f.

In the plasma processing apparatus 10, the plasma is generated in theprocessing chamber 12 when the etching is performed. However, a heightof a plasma sheath is changed due to the consumption of the focus ringFR, and thus the etching characteristics are changed.

FIG. 11 schematically shows an example of a state of the plasma sheath.FIG. 11 shows the wafer W and the focus ring FR placed on the mountingtable. The mounting table shown in FIG. 11 is a combination of the firstmounting table 60 and the second mounting table 70. D_(wafer) is athickness of the wafer W. d_(wafer) is a height from an upper surface ofthe wafer W to a plasma sheath interface above the wafer W. A thicknessD_(a) is a difference in height between a mounting surface of themounting table on which the wafer W is mounted and a mounting surface ofthe mounting table on which the focus ring FR is mounted. For example,in the second embodiment, the thickness D_(a) is a height differencebetween the mounting surface 60 d of the first mounting table 60 and themounting surface 70 d of the second mounting table 70. The thicknessD_(a) is determined as a fixed value depending on the configuration ofthe first mounting table 60 and the second mounting table 70. Thethickness z_(FR) is the thickness of the focus ring FR. A thicknessd_(FR) is a height from an upper surface of the focus ring FR to aplasma sheath interface above the focus ring FR.

A height difference ΔD_(wafer-FR) between the plasma sheath interfaceabove the wafer W and the plasma sheath interface above the focus ringFR can be expressed by the following equation (15).

ΔD _(wafer-FR)=(D _(a) +D _(wafer) +d _(wafer))−(z _(FR) +d _(FR))  (15)

For example, when the thickness z_(FR) of the focus ring FR becomesthinner due to the consumption of the focus ring FR, the heightdifference ΔD_(wafer-FR) is changed. For this reason, in the plasmaprocessing apparatus 10, the etching characteristics are changed.

However, in the plasma processing apparatus 10, the plasma state ischanged due to the magnetic forces from the electromagnets 80 a to 80 c.FIG. 12A is a graph showing an example of a relationship betweenmagnetic field strength and plasma electron density. As shown in FIG.12A, there is a proportional relationship between the magnetic fieldstrength of the magnetic force applied to the plasma and the plasmaelectron density.

The plasma electron density and a thickness of the plasma sheath have arelationship of the following equation (16)

$\begin{matrix}{{{Sheath}\mspace{14mu} {thickness}} = {\frac{\sqrt{2}}{3}\left( \frac{ɛ_{0}T_{e}}{e \cdot N_{e}} \right)\left( \frac{2\; V_{dc}}{T_{e}} \right)^{3/4}}} & (16)\end{matrix}$

Here, N_(e) is the plasma electron density. T_(e) is a plasma electrontemperature [eV]. V_(dc) is a potential difference with the plasma.V_(dc) is a potential difference between the plasma and the wafer W inthe case of plasma above the wafer W and is a potential differencebetween the plasma and the focus ring FR in the case of plasma on thefocus ring FR.

As shown in the equation (16), the thickness of the plasma sheath isinversely proportional to the electron density N_(e). Therefore, thereis an inversely proportional relationship between the magnetic fieldstrength of the magnetic force applied to the plasma and the plasmaelectron density. FIG. 12B is a graph showing an example of therelationship between the magnetic field strength and the thickness ofthe plasma sheath. As shown in FIG. 12B, the thickness of the plasmasheath is inversely proportional to the magnetic field strength of themagnetic force applied to the plasma.

Therefore, in the plasma processing apparatus 10 according to the secondembodiment, the magnetic field strength of the magnetic force generatedfrom each of the electromagnets 80 a to 80 c is controlled in order tosuppress the change in the etching characteristics due to theconsumption of the focus ring FR.

Referring back to FIG. 10, the correction information 104 a according tothe second embodiment stores a correction value for the power suppliedto each of the electromagnets 80 a to 80 c for each thickness of thefocus ring FR. For example, the amount of power of each of theelectromagnets 80 a to 80 c, at which the magnetic field strength thatallows the height difference ΔD_(wafer-FR) between the plasma sheathinterface above the wafer W and the plasma sheath interface above thefocus ring FR to be within a predetermined range can be obtained, isexperimentally measured. For example, when AC power is supplied from thepower supply to the electromagnet 80, one of AC voltage, AC frequencyand AC power is changed and the changed AC voltage, the changed ACfrequency or the changed AC power is measured as the amount of power.When DC power is supplied from the power supply to the electromagnet 80,either DC voltage or DC current amount is changed and the changed DCvoltage or the changed DC current amount is measured as the amount ofpower. The predetermined range is, e.g., a range of ΔD_(wafer-FR) inwhich a hole angle θ, when the wafer W is etched, is within an allowableaccuracy.

Based on the measurement result, for each thickness of the focus ringFR, the correction value of the power supplied to each of theelectromagnets 80 a to 80 c that allows the height differenceΔD_(wafer-FR) to be within the predetermined range is stored in thecorrection information 104 a. The correction value may be a value of theamount of power itself at which the difference ΔD_(wafer-FR) is withinthe predetermined range, or may be a difference value with respect tothe standard amount of power that is supplied to each of theelectromagnets 80 a to 80 c during the plasma processing. In the presentembodiment, the correction value is the value of the amount of powersupplied to each of the electromagnets 80 a to 80 c itself.

Here, in the case where the plasma processing apparatus 10 according tothe second embodiment corrects the power supplied to the electromagnet80 c to correct the height of the interface of the plasma sheath formedabove the focus ring FR will be described. The correction information104 a includes the correction value of the supply power to theelectromagnet 80 c for each thickness of the focus ring FR.Alternatively, the plasma processing apparatus 10 may correct the powersupplied to each of the electromagnets 80 a and 80 b to correct theheight of the interface of the plasma sheath formed above the wafer W.In this case, the correction information 104 a includes a correctionvalue for the supply power to each of the electromagnets 80 a and 80 bfor each thickness of the focus ring FR. Further alternatively, theplasma processing apparatus 10 may correct the power supplied to each ofthe electromagnets 80 a to 80 c to correct the height of the interfaceof the plasma sheath formed above the focus ring FR and the height ofthe interface of the plasma sheath formed above the wafer W. In thiscase, the correction information 104 a includes a correction value forthe supply power to each of the electromagnets 80 a to 80 c for eachthickness of the focus ring FR.

The plasma control unit 102 f controls the plasma processing such thatthe height difference ΔD_(wafer-FR) between the plasma sheath interfaceabove the wafer W and the plasma sheath interface above the focus ringFR is within the predetermined range.

The plasma control unit 102 f controls the magnetic force of each of theelectromagnets 80 a to 80 c based on the thickness z_(FR) of the focusring FR calculated by the parameter calculation unit 102 c. For example,the plasma control unit 102 f reads, from the correction information 104a, the correction value of the power supplied to each of theelectromagnets 80 a to 80 c corresponding to the thickness z_(FR) of thefocus ring FR. Then, the plasma control unit 102 f controls the powersupply connected to the electromagnets 80 a to 80 c so that the supplypowers corresponding to the read correction values are supplied to theelectromagnets 80 a to 80 c, respectively, during the plasma processing.In the present embodiment, the plasma control unit 102 f controls thepower supply connected to the electromagnet 80 c so that the supplypower corresponding to the correction value is supplied to theelectromagnet 80 c.

As a result, in the plasma processing apparatus 10, the heightdifference ΔD_(wafer-FR) between the plasma sheath interface above thewafer W and the plasma sheath interface above the focus ring FR becomeswithin the predetermined range. Accordingly, in the plasma processingapparatus 10, the change in the etching characteristics due to theconsumption of the focus ring FR can be suppressed.

Next, a plasma control process using the plasma processing apparatus 10according to the second embodiment will be described. FIG. 13 is aflowchart showing an example of the flow of determination processaccording to the second embodiment. The determination process accordingto the second embodiment is basically the same as the determinationprocess according to the first embodiment shown in FIG. 8. Therefore,the difference therebetween is mainly described hereinafter, and likereference numerals will be given to like parts and redundant descriptionthereof will be omitted.

The plasma control unit 102 f controls the plasma processing based onthe thickness z_(FR) of the focus ring FR calculated by the parametercalculation unit 102 c (step S18). For example, the plasma control unit102 f controls the magnetic forces of the electromagnets 80 a to 80 c toallow the height difference ΔD_(wafer-FR) between the plasma sheathinterface above the wafer W and the plasma sheath interface above thefocus ring FR to be within a predetermined range based on the thicknessz_(FR) of the focus ring FR.

As described above, the plasma processing apparatus 10 according to thesecond embodiment further includes the plasma control unit 102 f. Basedon the thickness z_(FR) of the focus ring FR, the plasma control unit102 f controls the plasma processing to allow the height differencebetween the interface of the plasma sheath formed above the wafer W andthe interface of the plasma sheath formed above the focus ring FR to bewithin the predetermined range. Accordingly, the plasma processingapparatus 10 can suppress the differences in the etching characteristicsof the wafers W.

The plasma processing apparatus 10 according to the second embodimentfurther includes at least one electromagnet 80 arranged in parallel withat least one of the wafer W or the focus ring FR. The plasma controlunit 102 f controls the supply power to the electromagnet 80 based onthe thickness z_(FR) of the focus ring FR, so that the magnetic force ofthe electromagnet 80 is controlled to allow the height differencebetween the interface of the plasma sheath formed above the wafer W andthe interface of the plasma sheath formed above the focus ring FR to bewithin the predetermined range. Therefore, the plasma processingapparatus 10 can suppress the differences in the etching characteristicsof the wafers W.

In the determination process according to the second embodiment shown inFIG. 13, the case where step S18 is executed after step S15 has beendescribed as an example. However, the present disclosure is not limitedthereto. For example, step S18 may be executed consecutively during theplasma processing on the wafer W used in step S15. Further, step S18 maybe executed during the plasma processing on and after the next wafer Wafter the plasma processing on the wafer W used in step S15 iscompleted.

When step S18 is continuously executed during the plasma processing onthe wafer W used in step S15, the plasma control unit 102 f controls themagnetic forces of the electromagnets 80 a to 80 c in the period T3shown in FIG. 7.

When step S18 is executed during the plasma processing on and after thenext wafer W after the plasma processing on the wafer W used in step S15is completed, the plasma control unit 102 f controls the magnetic forcesof the electromagnets 80 a to 80 c from the time period of the plasmaignition. When the magnetic forces of the electromagnets 80 a to 80 care changed from the initial setting values, the electron density of theplasma increases or decreases as shown in FIG. 12A, so that the heatinput amount from the plasma to the focus ring FR also increases ordecreases. In this case, it is desirable that the thickness z_(FR) ofthe focus ring FR calculated in step 15 is set as the known thickness ofthe focus ring FR, and the heat flux q_(p) from the plasma and thethermal resistance R_(th)·A with the magnetic forces of the controlledelectromagnets 80 a to 80 c are calculated by executing steps S13 andS14 again. Then, the calculated heat flux q_(p) and the calculatedthermal resistance R_(th)·A are stored in the storage unit 104 as a newheat flux q_(p) and a new thermal resistance R_(th)·A.

Further, in the determination process according to the second embodimentshown in FIG. 13, the case where step S18 is executed between step S15and step S16 has been described as an example. However, the presentdisclosure is not limited thereto. For example, step S18 may be executedafter “NO” in step 16, that is, when it is determined that the thicknessz_(FR) of the focus ring FR is not equal to or smaller than thepredetermined threshold. Therefore, it is possible to minimize thedeterioration of reproducibility caused when the plasma processing onthe wafer W is performed even when the thickness z_(FR) of the focusring FR is determined to be equal to or less than the predeterminedthreshold.

Third Embodiment

Next, a third embodiment will be described. FIG. 14 is a cross-sectionalview showing an example of a schematic configuration of a plasmaprocessing apparatus according to a third embodiment. A configuration ofthe plasma processing apparatus 10 according to the third embodiment isbasically the same as that of the plasma processing apparatus 10according to the second embodiment shown in FIG. 9. Therefore, thedifference therebetween is mainly described hereinafter, and likereference numerals will be given to like parts and redundant descriptionthereof will be omitted.

In the second mounting table 70 according to the third embodiment, anelectrode is additionally provided at the mounting surface 70 d on whichthe focus ring FR is mounted. For example, in the second mounting table70, an electrode 73 is additionally provided in the focus ring heaterunit 72 to extend along the entire circumference of the focus ringheater unit 72. The electrode 73 is electrically connected to a powersupply 74 through wiring. The power supply 74 according to the thirdembodiment is a DC power supply and applies a DC voltage to theelectrode 73.

The plasma state is changed due to the changes in the electricalcharacteristics of the surroundings of the plasma. For example, thestate of the plasma above the focus ring FR changes depending on themagnitude of the DC voltage applied to the electrode 73, which leads tothe change in the thickness of the plasma sheath.

Therefore, in the plasma processing apparatus 10 according to the thirdembodiment, the DC voltage applied to the electrode 73 is controlled tosuppress the change in the etching characteristics due to theconsumption of the focus ring FR.

The correction information 104 a according to the third embodimentstores a correction value for the DC voltage applied to the electrode 73for each thickness of the focus ring FR. For example, the DC voltageapplied to the electrode 73 that allows the height differenceΔD_(wafer-FR) between the plasma sheath interface above the wafer W andthe plasma sheath interface above the focus ring FR to be within apredetermined range is experimentally measured. Based on the measurementresults, for each thickness of the focus ring FR, the correction valueof the DC voltage applied to the electrode 73 that allows the heightdifference ΔD_(wafer-FR) to be within the predetermined range is storedin the correction information 104 a. The correction value may be a valueof the DC voltage at which the difference ΔD_(wafer-FR) is within thepredetermined range, or may be a difference value with respect to thestandard DC voltage applied to the electrode 73 during the plasmaprocessing. In the present embodiment, the correction value is the valueof the DC voltage applied to the electrode 73 itself.

The plasma control unit 102 f controls the DC voltage applied to theelectrode 73 based on the thickness z_(FR) of the focus ring FRcalculated by the parameter calculation unit 102 c. For example, theplasma control unit 102 f reads, from the correction information 104 a,the correction value of the DC voltage applied to the electrode 73corresponding to the thickness z_(FR) of the focus ring FR. Then, theplasma control unit 102 f controls the power supply 74 so that the DCvoltage corresponding to the read correction value is applied to theelectrode 73 during the plasma processing.

As a result, in the plasma processing apparatus 10, the heightdifference ΔD_(wafer-FR) between the plasma sheath interface above thewafer W and the plasma sheath interface above the focus ring FR becomeswithin the predetermined range. Accordingly, in the plasma processingapparatus 10, the change in the etching characteristics due to theconsumption of the focus ring FR can be suppressed.

As described above, the plasma processing apparatus 10 according to thethird embodiment further includes the electrode 73 that is provided atthe mounting surface 70 d on which the focus ring FR is mounted and towhich a DC voltage is applied. Based on the thickness z_(FR) of thefocus ring FR, the plasma control unit 102 f controls the DC voltageapplied to the electrode 73 to allow the height difference between theinterface of the plasma sheath formed above the wafer W and theinterface of the plasma sheath formed above the focus ring FR to bewithin the predetermined range. Accordingly, the plasma processingapparatus 10 can suppress the differences in the etching characteristicsof the wafers W.

Fourth Embodiment

Next, a fourth embodiment will be described. FIG. 15 is across-sectional view showing an example of a schematic configuration ofa plasma processing apparatus according to a fourth embodiment. Aconfiguration of the plasma processing apparatus 10 according to thefourth embodiment is basically the same as that of the plasma processingapparatus 10 according to the second embodiment shown in FIG. 9.Therefore, the difference therebetween is mainly described hereinafter,and like reference numerals will be given to like parts and redundantdescription thereof will be omitted.

Each of the electrode plate 34 and the electrode support 36 of the upperelectrode 30 according to the fourth embodiment is divided into aplurality of portions by an insulating member. For example, each of theelectrode support 36 and the electrode plate 34 is divided into acentral portion 30 a and a peripheral portion 30 b by an annularinsulating member 37. The central portion 30 a is formed in a disc shapeand is arranged above the central portion of the first mounting table60. The peripheral portion 30 b is formed in an annular shape tosurround the central portion 30 a and is arranged above the outerperipheral portion of the first mounting table 60.

In the upper electrode 30 according to the fourth embodiment, DCcurrents can be individually applied to the divided portions, and eachof the divided portions serve as the upper electrode. For example, avariable DC power supply 93 a is electrically connected to theperipheral portion 30 b through a low-pass filter (LPF) 90 a and anon/off switch 91 a. A variable DC power supply 93 b is electricallyconnected to the central portion 30 a through a low-pass filter (LPF) 90b and an on/off switch 91 b. The power respectively applied by thevariable DC power supplies 93 a and 93 b to the central portion 30 a andthe peripheral portion 30 b can be controlled by the control unit 100.The central portion 30 a and the peripheral portion 30 b serve aselectrodes.

The plasma state is changed due to the changes in the electricalcharacteristics of the surroundings of the plasma. For example, in theplasma processing apparatus 10, the plasma state changes depending onthe magnitudes of the voltages applied to the central portion 30 a andthe peripheral portion 30 b, respectively.

Therefore, in the plasma processing apparatus 10 according to the fourthembodiment, the voltages applied to the central portion 30 a and theperipheral portion 30 b are controlled to suppress the changes in theetching characteristics due to consumption of the focus ring FR.

The correction information 104 a according to the fourth embodimentstores a correction value of the DC voltage applied to each of thecentral portion 30 a and the peripheral portion 30 b for each thicknessof the focus ring FR. For example, the DC voltages respectively appliedto the central portion 30 a and the peripheral portion 30 b that allowthe height difference ΔD_(wafer-FR) between the plasma sheath interfaceabove the wafer W and the plasma sheath interface above the focus ringFR to be within a predetermined range is experimentally measured. Basedon the measurement result, for each thickness of the focus ring FR, thecorrection values of the DC voltages respectively applied to the centralportion 30 a and the peripheral portion 30 b that allow the differenceΔD_(wafer-FR) to be within the predetermined range is stored in thecorrection information 104 a. The correction values may be values of theDC voltages applied to the central portion 30 a and the peripheralportion 30 b themselves, or a difference value with respect to thestandard DC voltage applied to each of the central portion 30 a and theperipheral portion 30 b during the plasma processing. In the presentembodiment, the correction value is the value of the DC voltage appliedto each of the central portion 30 a and the peripheral portion 30 b.

Here, the case where the plasma processing apparatus 10 according to thefourth embodiment corrects the height of the interface of the plasmasheath formed above the focus ring FR by correcting the DC voltageapplied to the peripheral portion 30 b is described. In the correctioninformation 104 a, the correction value for the DC voltage applied tothe peripheral portion 30 b is stored for each thickness of the focusring FR. The plasma processing apparatus 10 may further divide the upperelectrode 30 into multiple annular shaped portions and correct the DCvoltage applied to each of the multiple annular shaped portions tocorrect the height of the interface of the plasma sheath formed abovethe wafer W.

The plasma control unit 102 f controls the DC voltage applied to theperipheral portion 30 b based on the thickness z_(FR) of the focus ringFR calculated by the parameter calculation unit 102 c. For example, theplasma control unit 102 f reads, from the correction information 104 a,the correction value of the DC voltage applied to the peripheral portion30 b corresponding to the thickness z_(FR) of the focus ring FR. Then,the plasma control unit 102 f controls the variable DC power supply 93 aso that the DC voltage having the read correction value is supplied tothe peripheral portion 30 b during the plasma processing.

As a result, in the plasma processing apparatus 10, the heightdifference ΔD_(wafer-FR) between the plasma sheath interface above thewafer W and the plasma sheath interface above the focus ring FR becomeswithin the predetermined range. Accordingly, in the plasma processingapparatus 10, the changes in the etching characteristics due to theconsumption of the focus ring FR can be suppressed.

As described above, the upper electrode (gas supply unit) 30 accordingto the fourth embodiment is disposed to face the wafer W and the focusring FR to inject processing gas and has the central portion 30 a andthe peripheral portion 30 b that serve as electrodes disposed inparallel with the wafer W and the focus ring FR. The plasma control unit102 f controls the supply powers to the central portion 30 a and theperipheral portion 30 b based on the thickness z_(FR) of the focus ringFR to allow the height difference between the interface of the plasmasheath formed above the wafer W and the interface of the plasma sheathformed above the focus ring FR to be within the predetermined range.Accordingly, the plasma processing apparatus 10 can suppress thedifferences in the etching characteristics of the wafers W.

Fifth Embodiment

Next, a fifth embodiment will be described. FIG. 16 is a cross-sectionalview showing an example of a schematic configuration of a plasmaprocessing apparatus according to a fifth embodiment. A configuration ofthe plasma processing apparatus 10 according to the fifth embodiment isbasically the same as that of the plasma processing apparatus 10according to the second embodiment shown in FIG. 9. Therefore, thedifference therebetween is mainly described hereinafter, and likereference numerals will be given to like parts and redundant descriptionthereof will be omitted. In the plasma processing apparatus 10 accordingto the fifth embodiment, the electromagnet 80 is not provided on theupper surface of the upper electrode 30, and the second mounting table70 can be moved up and down.

(Configurations of First Mounting Table and Second Mounting Table)

Configurations of principal parts of the first mounting table 2 and thesecond mounting table 7 according to the fifth embodiment will bedescribed with reference to FIG. 17. FIG. 17 is a schematiccross-sectional view showing the configurations of the principal partsof the first mounting table and the second mounting table according tothe fifth embodiment.

The first mounting table 60 includes the base 62 and the electrostaticchuck 61. The electrostatic chuck 61 is adhered to the base 62 throughan insulating layer 64. The electrostatic chuck 61 is formed in a discshape and provided coaxially with respect to the base 62. In theelectrostatic chuck 61, the electrode E1 is provided in an insulator.The upper surface of the electrostatic chuck 61 serves as the mountingsurface 60 d on which the wafer W is mounted. A flange portion 61 aprojecting outwardly in a radial direction of the electrostatic chuck 61is formed at a lower end of the electrostatic chuck 61. In other words,the electrostatic chuck 61 has different outer diameters depending onpositions of the side surface.

The electrostatic chuck 61 includes the heater HT1. The coolant channel24 a is formed in the base 62. The coolant channel 24 a and the heaterHT1 function as a temperature control mechanism for controlling thetemperature of the wafer W. The heater HT1 may not be provided in theelectrostatic chuck 61. For example, the heater HT1 may be adhered tothe lower surface of the electrostatic chuck 61 or may be interposedbetween the mounting surface 60 d and the coolant channel 24 a.

The second mounting table 70 includes the base 71 and the focus ringheater unit 72. The base 71 is supported by the base 62. The focus ringheater unit 72 includes the heater HT2. A coolant channel 24 b is formedin the base 71. The coolant channel 24 b and the heater HT2 function asa temperature control mechanism for controlling the temperature of thefocus ring FR. The focus ring heater unit 72 is adhered to the base 71through an insulating layer 76. An upper surface of the focus ringheater unit 72 serves as the mounting surface 70 d on which the focusring FR is mounted. A sheet member having high thermal conductivity orthe like may be provided on the upper surface of the focus ring heaterunit 72.

The focus ring FR that is an annular member is coaxially provided withrespect to the second mounting table 70. A protruding portion FRa isprotruded in a radial direction from an inner side surface of the focusring FR. In other words, the focus ring FR has different the innerdiameters depending on positions of the inner side surface thereof. Forexample, an inner diameter of a portion of the focus ring FR where theprotruding portion FRa is not formed is greater than an outer diameterof the wafer W and an outer diameter of the flange portion 61 a of theelectrostatic chuck 61. On the other hand, an inner diameter of aportion of the focus ring FR where the protruding portion FRa is formedis smaller than the outer diameter of the flange portion 61 a of theelectrostatic chuck 61 and greater than an outer diameter of a portionof the electrostatic chuck 61 where the flange portion 61 a is notformed.

The focus ring FR is disposed on the second mounting table 70 in a statewhere the protruding portion FRa is separated from an upper surface ofthe flange portion 61 a of the electrostatic chuck 61 and also separatedfrom a side surface of the electrostatic chuck 61. In other words, a gapis formed between a lower surface of the protruding portion FRa of thefocus ring FR and the upper surface of the flange portion 61 a of theelectrostatic chuck 61. Further, a gap is formed between a side surfaceof the protruding portion FRa of the focus ring FR and a side surface ofthe electrostatic chuck 61 where the flange portion 61 a is not formed.The protruding portion FRa of the focus ring FR is located above a gap110 between the base 62 of the first mounting table 60 and the base 71of the second mounting table 70. In other words, when viewed from adirection perpendicular to the mounting surface 60 d, the protrudingportion FRa overlaps with the gap 110 and covers the gap 110.Accordingly, it is possible to suppress inflow of the plasma into thegap 110.

An elevating mechanism 120 for vertically moving the second mountingtable 70 is provided at the first mounting table 60. For example, theelevating mechanism 120 is provided at the first mounting table 60 to bepositioned below the second mounting table 70. The elevating mechanism120 has therein an actuator and vertically moves the second mountingtable 70 by extending and contracting a rod 120 a by using driving forceof the actuator. The elevating mechanism 120 may obtain driving forcefor expanding and contracting the rod 120 a by converting the drivingforce of the motor by a gear or the like, or may obtain driving forcefor expanding and contracting the rod 120 a by a hydraulic pressure orthe like. Between the first mounting table 60 and the second mountingtable 70, an O-ring 112 for interrupting vacuum is provided.

The second mounting table 70 is configured not to be affected even if itis raised. For example, the cooling channel 24 b is configured as aflexible line or a mechanism capable of supplying a coolant even if thesecond mounting table 70 is vertically moved. The wiring for supplyingpower to the heater HT2 may be configured as a flexible wiring or amechanism that is electrically connected even if the second mountingtable 70 is vertically moved.

Further, the first mounting table 60 is provided with a conducting part130 that is electrically connected to the second mounting table 70. Theconducting part 130 is configured to electrically connect the firstmounting table 60 and the second mounting table 70 even if the secondmounting table 70 is vertically moved by the elevating mechanism 120.For example, the conducting part 130 is configured as a flexible wiringor a mechanism that is electrically connected by contact between aconductor and the base 71 even if the second mounting table 70 isvertically moved. The conducting part 130 is provided so that the secondmounting table 70 and the first mounting table 60 have equal electricalcharacteristics. For example, a plurality of conducting parts 130 areprovided on a circumferential surface of the first mounting table 60.The RF power supplied to the first mounting table 60 is also supplied tothe second mounting table 70 through the conducting part 130.Alternatively, the conducting part 130 may be provided between the uppersurface of the first mounting table 60 and the lower surface of thesecond mounting table 70.

The elevating mechanism 120 is arranged at multiple positions in acircumferential direction of the focus ring FR. In the plasma processingapparatus 10 according to the present embodiment, three elevatingmechanisms 120 are provided. For example, the elevating mechanisms 120are arranged on the side of the second mounting table 70 at a regularinterval in a circumferential direction of the second mounting table 70.For example, the elevating mechanisms 120 are disposed at positions onthe side of the second mounting table 70 at an interval of 120° in thecircumferential direction of the second mounting table 70. Four or moreelevating mechanisms 120 may be provided on the side of the secondmounting table 70.

In the plasma processing apparatus 10, when the plasma processing isperformed, the focus ring FR is consumed and the thickness z_(FR) of thefocus ring FR is reduced. When the thickness z_(FR) of the focus ring FRbecomes thin, a height different occurs between the plasma sheath abovethe focus ring FR and the plasma sheath above the wafer W, and thus theetching characteristics are changed.

Therefore, in the plasma processing apparatus 10 according to the fifthembodiment, the elevating mechanism 120 is controlled in response to thethickness z_(FR) of the focus ring FR.

The plasma control unit 102 f controls the elevating mechanism 120 basedon the thickness z_(FR) of the focus ring FR calculated by the parametercalculation unit 102 c. For example, the plasma control unit 102 fsubtracts the thickness z_(FR) of the current focus ring FR from thethickness of a new focus ring FR to obtain the consumed thickness. Theplasma control unit 102 f controls the elevating mechanism 120 to bemoved up by the consumed thickness.

FIGS. 18A to 18C show an example of a sequence of raising the secondmounting table. FIG. 18A shows a state where a new focus ring FR ismounted on the second mounting table 70. The height of the secondmounting table 70 is adjusted so that the upper surface of the focusring FR is located at a predetermined height when the new focus ring FRis mounted. For example, when the new focus ring FR is mounted on thesecond mounting table 70, the height of the second mounting table 70 isadjusted so that the etching uniformity of the wafer W is obtained. Asthe wafer W is etched, the focus ring FR is also consumed. FIG. 18Bshows a state where the focus ring FR is consumed. In the example shownin FIG. 18B, the upper surface of the focus ring FR is consumed by 0.2mm. In the plasma processing apparatus 10, the thickness z_(FR) of thefocus ring FR is calculated by the parameter calculation unit 102 c, andthe consumption amount of the focus ring FR is determined. Then, theplasma processing apparatus 10 controls elevating mechanism 120 to raisethe second mounting base 70 in response to the consumption amount. FIG.18C shows a state where the second mounting table 70 is raised. In theexample shown in FIG. 18C, the upper surface of the focus ring FR israised by 0.2 mm by raising the second mounting table 70.

As a result, in the plasma processing apparatus 10, the heightdifference ΔD_(wafer-FR) between the plasma sheath interface above thewafer W and the plasma sheath interface above the focus ring FR fallswithin a predetermined range. Accordingly, in the plasma processingapparatus 10, the change in the etching characteristics due to theconsumption of the focus ring FR can be suppressed.

As described above, the plasma processing apparatus 10 according to thefifth embodiment includes the elevating mechanism 120 configured tovertically move the focus ring FR. The plasma control unit 102 fcontrols the elevating mechanism 120 based on the thickness z_(FR) ofthe focus ring FR 1 to allow the height difference between the interfaceof the plasma sheath formed above the wafer W and the interface of theplasma sheath formed above the focus ring FR to be within thepredetermined range. Therefore, the plasma processing apparatus 10 cansuppress the differences in the etching characteristics of the wafers W.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosures. Indeed, the embodiments described herein maybe embodied in a variety of other forms. Furthermore, various omissions,substitutions and changes in the form of the embodiments describedherein may be made departing from the scope of the accompanying claimsand the spirit of the disclosures. The accompanying claims and theirequivalents are intended to cover such forms or modifications as wouldfall within the scope and spirit of the disclosures.

For example, the above-described plasma processing apparatus 10 is acapacitively coupled plasma processing apparatus 10. However, it ispossible to employ any plasma processing apparatus 10. For example, theplasma processing apparatus 10 may be any type of plasma processingapparatus 10 such as an inductively coupled plasma processing apparatus10 or a plasma processing apparatus 10 for exciting a gas by a surfacewave such as microwave.

In the above-described embodiments, the case where the consumable partconsumed by the plasma processing is the focus ring FR has beendescribed as an example. However, the present disclosure is not limitedthereto. Any consumable part may be used. For example, the wafer W isconsumed by the plasma processing. Therefore, the wafer W may serve asthe consumable part, and the plasma processing apparatus 10 maycalculate the thickness of the wafer W. The aforementioned equations (1)to (13) may be applied to the calculation of the thickness of the waferW by replacing the parameters regarding the focus ring FR such as thedensity, the heat capacity, and the thickness of the focus ring FR withthe parameters regarding the wafer W. The mounting table 16 includes theheater HT1 configured to adjust the temperature of the mounting surfaceon which the wafer W is mounted. The heater control unit 102 a controlsa supply power supplied to the heater HT1 such that the heater HT1reaches a setting temperature. While the heater control unit 102 acontrols the supply power to the heater HT1 such that the temperature ofthe heater HT1 becomes constant, the measurement unit 102 b measures thesupply power in the non-ignition state and the supply power in thetransient state. The parameter calculation unit 102 c calculates thethickness of the wafer W by performing fitting of the measurementresults by using the equations (1) to (11) as a calculation model.Accordingly, the plasma processing apparatus 10 can obtain the thicknessof the wafer W.

In the above-described embodiments, as shown in FIG. 2, the case wherethe mounting region 18 a of the electrostatic chuck 18 is divided intotwo division regions 75 in the radial direction has been described as anexample. However, the present disclosure is not limited thereto. Forexample, the mounting region 18 a may be divided in the circumferentialdirection. For example, the division region 75 b on which the focus ringFR is disposed may be divided in the circumferential direction.

FIG. 19 is a plan view showing a mounting table according to anotherembodiment. In FIG. 19, the division region 75 b is divided into eightdivision regions 75 b 1 to 75 b 8 in the circumferential direction. Thefocusing ring FR is disposed on the division regions 75 b 1 to 75 b 8.The heater HT2 is provided in each of the division regions 75 b 1 to 75b 8. The heater control unit 102 a controls the supply power to eachheater HT2 so that the heater HT2 provided in each of the divisionregions 75 b 1 to 75 b 8 reaches a setting temperature set for eachdivision region. While the heater control unit 102 a controls the supplypower to each heater HT2 such that the temperature of the heater HT2becomes constant, the measurement unit 102 b measures the supply powerin the non-ignition state and the supply power in the transient statefor each heater HT2.

For each heater HT2, the parameter calculation unit 102 c calculates thethickness z_(FR) of the focus ring FR by performing fitting with thecalculation model by using the supply power in the non-ignition stateand the supply power in the transient state measured by the measurementunit 102 b. Accordingly, the plasma processing apparatus 10 can obtainthe thickness z_(FR) of the focus ring FR for each of the divisionregions 75 b 1 to 75 b 8.

In the above-described embodiments, the case where the plasma state ischanged by performing one of the change of the magnetic force of theelectromagnet 80, the change of the power supplied to the electrode 73,the change of the powers supplied to the central portion 30 a and theperipheral portion 30 b, and the raising and lowering of the focus ringFR has been described as an example. However, the present disclosure isnot limited thereto. The plasma state may be changed by changing animpedance. For example, the impedance of the second mounting table 70may be changed. The plasma control unit 102 f controls the impedance ofthe second mounting table 70 based on the thickness z_(FR) of the focusring such that the height difference ΔD_(wafer-FR) between the plasmasheath interface above the wafer W and the plasma sheath interface abovethe focus ring FR falls within a predetermined range. For example, aring-shaped space is formed in the vertical direction inside the secondmounting table 70, and a ring-shaped conductor is provided in the spaceso as to be moved up and down by a conductor driving mechanism. Theconductor is made of a conductive material such as aluminum. Therefore,the impedance of the second mounting table 70 can be changed byvertically moving the conductor by the conductor driving mechanism.Further, the second mounting table 70 may have any configuration as longas the impedance can be changed.

The correction information 104 a stores an impedance correction valuefor each thickness of the focus ring FR. For example, a height of theconductor that allows the height difference ΔD_(wafer-FR) between theplasma sheath interface above the wafer W and the plasma sheathinterface above the focus ring FR to be within a predetermined range isexperimentally measured. In the correction information 104 a, for eachthickness of the wafer W, a correction value of the height of theconductor that allows the height difference ΔD_(wafer-FR) to be withinthe predetermined range is stored based on the measurement result. Theplasma control unit 102 f reads, from the correction information 104 a,a correction value for the height of the conductor that corresponds tothe thickness z_(FR) of the focus ring FR calculated by the parametercalculation unit 102 c. Then, the plasma control unit 102 f controls theconductor driving mechanism so that the height of the conductor becomesa height corresponding to the read correction value at the time of theplasma processing. Thus, in the plasma processing apparatus 10, theheight difference ΔD_(wafer-FR) between the plasma sheath interfaceabove the wafer W and the plasma sheath interface above the focus ringFR is within a predetermined range, and the differences in the etchingcharacteristics of the wafers W can be suppressed.

In the fourth embodiment described above, the case where the DC voltageis applied from the power supply 74 to the electrode 73 has beendescribed as an example. However, the present disclosure is not limitedthereto. For example, the power supply 74 may be an AC power supply. Theplasma control unit 102 f may control one of the frequency, the voltage,and the power of AC power supplied from the power supply 74 to theelectrode 73 based on the thickness z_(FR) of the focus ring FR suchthat the height difference ΔD_(wafer-FR) between the plasma sheathinterface above the wafer W and the plasma sheath interface above thefocus ring FR falls within a predetermined range.

Moreover, the above-described embodiments may be combined to beimplemented. For example, the second embodiment and the third embodimentmay be combined to control the magnetic force of the electromagnet 80and the DC voltage applied to the electrode 73 such that the heightdifference between the plasma sheath interface above the wafer W and theplasma sheath interface above the focus ring FR falls within apredetermined range.

In the sixth embodiment described above, the case where the elevatingmechanism 120 is used to raise and lower the focus ring FR by verticallymoving the second mounting table 70 has been described as an example.However, the present disclosure is not limited thereto. For example, apin or the like is vertically moved and extend through the secondmounting table 70 to raise and lower the focus ring FR only.

In each of the above-described embodiments, the problem caused by theconsumption of the focus ring has been described as an example. However,the present disclosure is not limited thereto. Since the same problemoccurs in all consumable parts consumed by the plasma processing, forexample, if a temperature of a protective cover made of an insulatordisposed to surround the outer peripheral portion of the focus ring isalso adjusted with a heater and the like, the degree of consumption canbe obtained in the same manner described above. Further, the thicknessof the wafer W mounted on the mounting table can be calculated by in thesame manner described above.

1. A plasma processing apparatus comprising: a mounting table includinga heater configured to adjust a temperature of a mounting surfacethereof on which a consumable part that is consumed by plasma processingis mounted; a heater control unit configured to control a supply powerto the heater such that the heater reaches a setting temperature; ameasurement unit configured to measure, while the supply power to theheater is controlled by the heater control unit such that thetemperature of the heater becomes constant, the supply power in anon-ignition state in which plasma is not ignited and the supply powerin a transient state in which the supply power to the heater isdecreased after the plasma is ignited, a parameter calculation unitconfigured to calculate a thickness of the consumable part by performingfitting of the thickness of the consumable part with a calculationmodel, which has the thickness of the consumable part as a parameter andcalculates the supply power in the transient state, by using themeasured supply power in the non-ignition state and the measured supplypower in the transient state.
 2. The plasma processing apparatus ofclaim 1, wherein, in the mounting table, the mounting surface is dividedinto multiple division regions, and the heater is disposed in each ofthe multiple division regions, wherein the heater control unit controlsthe supply power to the heater such that the heater disposed in each ofthe multiple division regions reaches a setting temperature of thecorresponding division regions, wherein the measurement unit measuresthe supply power in the non-ignition state and the supply power in thetransient state for the heater disposed in each of the multiple divisionregions while the supply power to the heater disposed in each of themultiple division regions is controlled by the heater control unit suchthat the temperature of the heater is constant, and wherein theparameter calculation unit calculates the thickness of the consumablepart for the heater disposed in each of the multiple division regions byperforming the fitting of the thickness of the consumable part with thecalculation model for the heater disposed in each of the multipledivision regions by using the supply power in the non-ignition state andthe supply power in the transient state.
 3. The plasma processingapparatus of claim 1, wherein the measurement unit measures the supplypower in the non-ignition state and the supply power in the transientstate in a predetermined cycle, wherein the parameter calculation unitcalculates the thickness of the consumable part in each iteration of thepredetermined cycle by using the measured supply power in thenon-ignition state and the measured supply power in the transient state,and wherein the plasma processing apparatus further comprises an alarmunit configured to issue an alarm based on a change in the thickness ofthe consumable part calculated by the parameter calculation unit.
 4. Theplasma processing apparatus of claim 2, wherein the measurement unitmeasures the supply power in the non-ignition state and the supply powerin the transient state in a predetermined cycle, wherein the parametercalculation unit calculates the thickness of the consumable part in eachiteration of the predetermined cycle by using the measured supply powerin the non-ignition state and the measured supply power in the transientstate, and wherein the plasma processing apparatus further comprises analarm unit configured to issue an alarm based on a change in thethickness of the consumable part calculated by the parameter calculationunit.
 5. The plasma processing apparatus of claim 1, wherein theconsumable part is a focus ring, and the focus ring is disposed on themounting table to surround a target object for the plasma processing,and wherein the plasma processing apparatus further comprises a plasmacontrol unit configured to control the plasma processing based on thethickness of the focus ring calculated by the parameter calculation unitsuch that a height difference between an interface of a plasma sheathformed above the target object and an interface of a plasma sheathformed above the focus ring is within a predetermined range.
 6. Theplasma processing apparatus of claim 2, wherein the consumable part is afocus ring, and the focus ring is disposed on the mounting table tosurround a target object for the plasma processing, and wherein theplasma processing apparatus further comprises a plasma control unitconfigured to control the plasma processing based on the thickness ofthe focus ring calculated by the parameter calculation unit such that aheight difference between an interface of a plasma sheath formed abovethe target object and an interface of a plasma sheath formed above thefocus ring is within a predetermined range.
 7. The plasma processingapparatus of claim 5, further comprising: at least one electromagnetarranged in parallel with at least one of the target object or the focusring, wherein the plasma control unit controls a supply power to theelectromagnet based on the thickness of the focus ring such that amagnetic force of the electromagnet is controlled to allow the heightdifference between the interface of the plasma sheath formed above thetarget object and the interface of the plasma sheath formed above thefocus ring to be within the predetermined range.
 8. The plasmaprocessing apparatus of claim 6, further comprising: at least oneelectromagnet arranged in parallel with at least one of the targetobject or the focus ring, wherein the plasma control unit controls asupply power to the electromagnet based on the thickness of the focusring such that a magnetic force of the electromagnet is controlled toallow the height difference between the interface of the plasma sheathformed above the target object and the interface of the plasma sheathformed above the focus ring to be within the predetermined range.
 9. Theplasma processing apparatus of claim 5, further comprising: an electrodeprovided at the mounting surface on which the focus ring is mounted andto which a DC voltage is applied, wherein the plasma control unitcontrols the DC voltage applied to the electrode based on the thicknessof the focus ring to allow the height difference between the interfaceof the plasma sheath formed above the target object and the interface ofthe plasma sheath formed above the focus ring to be within thepredetermined range.
 10. The plasma processing apparatus of claim 6,further comprising: an electrode provided at the mounting surface onwhich the focus ring is mounted and to which a DC voltage is applied,wherein the plasma control unit controls the DC voltage applied to theelectrode based on the thickness of the focus ring to allow the heightdifference between the interface of the plasma sheath formed above thetarget object and the interface of the plasma sheath formed above thefocus ring to be within the predetermined range.
 11. The plasmaprocessing apparatus of claim 5, further comprising: an electrodeprovided at a mounting surface on which the focus ring is mounted and towhich an AC voltage is applied, wherein the plasma control unit controlsthe AC voltage applied to the electrode based on the thickness of thefocus ring to allow the height difference between the interface of theplasma sheath formed above the target object and the interface of theplasma sheath formed above the focus ring to be within the predeterminedrange.
 12. The plasma processing apparatus of claim 6, furthercomprising: an electrode provided at a mounting surface on which thefocus ring is mounted and to which an AC voltage is applied, wherein theplasma control unit controls the AC voltage applied to the electrodebased on the thickness of the focus ring to allow the height differencebetween the interface of the plasma sheath formed above the targetobject and the interface of the plasma sheath formed above the focusring to be within the predetermined range.
 13. The plasma processingapparatus of claim 5, wherein an impedance of the mounting table onwhich the focus ring is mounted is changeable, and wherein the plasmacontrol unit controls the impedance of the mounting table based on thethickness of the focus ring to allow the height difference between theinterface of the plasma sheath formed above the target object and theinterface of the plasma sheath formed above the focus ring to be withinthe predetermined range.
 14. The plasma processing apparatus of claim 6,wherein an impedance of the mounting table on which the focus ring ismounted is changeable, and wherein the plasma control unit controls theimpedance of the mounting table based on the thickness of the focus ringto allow the height difference between the interface of the plasmasheath formed above the target object and the interface of the plasmasheath formed above the focus ring to be within the predetermined range.15. The plasma processing apparatus of claim 5, further comprising: agas supply unit disposed to face the target object and the focus ring toinject a processing gas and having an electrode that is provided inparallel with at least one of the target object and the focus ring,wherein the plasma control unit controls a supply power to the electrodebased on the thickness of the focus ring to allow the height differencebetween the interface of the plasma sheath formed above the targetobject and the interface of the plasma sheath formed above the focusring to be within the predetermined range.
 16. The plasma processingapparatus of claim 6, further comprising: a gas supply unit disposed toface the target object and the focus ring to inject a processing gas andhaving an electrode that is provided in parallel with at least one ofthe target object and the focus ring, wherein the plasma control unitcontrols a supply power to the electrode based on the thickness of thefocus ring to allow the height difference between the interface of theplasma sheath formed above the target object and the interface of theplasma sheath formed above the focus ring to be within the predeterminedrange.
 17. The plasma processing apparatus of claim 5, furthercomprising: an elevating mechanism configured to vertically move thefocus ring, wherein the plasma control unit controls the elevatingmechanism based on the thickness of the focus ring to allow the heightdifference between the interface of the plasma sheath formed above thetarget object and the interface of the plasma sheath formed above thefocus ring to be within the predetermined range.
 18. The plasmaprocessing apparatus of claim 6, further comprising: an elevatingmechanism configured to vertically move the focus ring, wherein theplasma control unit controls the elevating mechanism based on thethickness of the focus ring to allow the height difference between theinterface of the plasma sheath formed above the target object and theinterface of the plasma sheath formed above the focus ring to be withinthe predetermined range.
 19. A calculation method comprising: measuring,while a supply power to a heater is controlled such that the heaterreaches a setting temperature, a supply power in a non-ignition state inwhich plasma is not ignited and a supply power in a transient state inwhich the supply power to the heater is decreased after the plasma isignited, wherein the heater is included in a mounting table having amounting surface on which a consumable part that is consumed by plasmaprocessing is mounted and is configured to adjust a temperature of themounting surface; and calculating a thickness of the consumable part byperforming fitting of the thickness of the consumable part with acalculation model, which has the thickness of the consumable part as aparameter and calculates the supply power in the transient state, byusing the measured supply power in the non-ignition state and themeasured supply power in the transient state.
 20. A calculation programstored in a non-transitory computer-readable storage medium, whenexecuted by a processor, causes the processor to perform measuring,while a supply power to a heater is controlled such that the heaterreaches a setting temperature, a supply power in a non-ignition state inwhich plasma is not ignited and a supply power in a transient state inwhich the supply power to the heater is decreased after the plasma isignited, wherein the heater is included in a mounting table having amounting surface on which a consumable part that is consumed by plasmaprocessing is mounted and is configured to adjust a temperature of themounting surface; and calculating a thickness of the consumable part byperforming fitting of the thickness of the consumable part with acalculation model, which has the thickness of the consumable part as aparameter and calculates the supply power in the transient state, byusing the measured supply power in the non-ignition state and themeasured supply power in the transient state.